Electronics-Microwaves(Date:2003/01/09)

Presentation
表紙

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[Date]2003/1/9
[Paper #]
目次

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[Date]2003/1/9
[Paper #]
Development of InP/InGaAs Single-Heterojunction Bipolar Transistor with High Uniformity and High Reliability

Takeshi KAWASAKI,  Ryuji YAMABI,  Kenji KOTANI,  Masaki YANAGISAWA,  Seiji YAEGASSI,  Hiroshi YANO,  

[Date]2003/1/9
[Paper #]ED2002-255
Fabrication Technology for Ultrahigh-Speed Decananometer-Gate InP-Based HEMTs

Akira ENDOH,  Yoshimi YAMASHITA,  Keisuke SHINOHARA,  Kohki HIKOSAKA,  Toshiaki MATSUI,  Satoshi HIYAMIZU,  Takashi MIMURA,  

[Date]2003/1/9
[Paper #]ED2002-256,MW2002-143
Ultra high-speed digital Ics using InP HEMTs

Toshihide SUZUKI,  Yasuhiro NAKASHA,  Hideki KANO,  Ken SAWADA,  Kozo MAKIYAMA,  Tsuyoshi TAKAHASHI,  Masahiro NISHI,  Tatsuya HIROSE,  

[Date]2003/1/9
[Paper #]ED2002-257,MW2002-144
100-Gbit/s Logic IC using InP HEMTs

Koichi MURATA,  Kimikazu SANO,  Hiroto KITABAYASHI,  Suehiro SUGITANI,  Hirohiko SUGAHARA,  Takatomo ENOKI,  

[Date]2003/1/9
[Paper #]ED2002-258,MW2002-145
1.7-W 50-Gbit/s InP HEMT 4:1 Multiplexer IC with a Multi-phase Clock Architecture

Kimikazu Sano,  Koichi Murata,  Suehiro Sugitani,  Hirohiko Sugahara,  Takatomo Enomoto,  

[Date]2003/1/9
[Paper #]ED2002-259,MW2002-146
Double-recessed 0.1-μm-gate InP-HEMTs for 40-Gb/s Optical Communication Systems

Shinichi HOSHI,  Hironobu MORIGUCHI,  Masanori ITOH,  Tomoyuki OHSHIMA,  Masanori TSUNOTANI,  Toshihiko ICHIOKA,  

[Date]2003/1/9
[Paper #]ED2002-260,MW2002-147
Monolithically Integrated Photoreceiver with Optical Waveguide for 100-Gbit/s Class OEIC

Tomoyuki AKEYOSHI,  Kiyomitsu ONODERA,  Atsushi ARATAKE,  Shinji AOYAMA,  Takao ISHII,  Masami TOKUMITSU,  

[Date]2003/1/9
[Paper #]ED2002-261,MW2002-148
Flip-chip Distributed Amplifier with a bandwidth of 110 GHz

Satoshi MASUDA,  

[Date]2003/1/9
[Paper #]ED2002-262,MW2002-149
1.4-THz Gain-Bandwidth Product Preamplifier IC

Masaru SATO,  Hisao SHIGEMATSU,  Yusuke INOUE,  Tatsuya HIROSE,  

[Date]2003/1/9
[Paper #]ED2002-263,MW2002-150
A 60W AlGaN/GaN Heterojunction with a Field-Modulating Plate

Yasijoro OKAMOTO,  Yuji ANDO,  Takashi INOUE,  Tatsuo NAKAYAMA,  Hironobu MIYAMOTO,  Masaaki KUZUHARA,  

[Date]2003/1/9
[Paper #]ED2002-264,MW2002-151
Ka-band 2.3W Power AIGaN/GaN Heterojunction FET

Takashi INOUE,  Kensuke KASAHARA,  Hironobu MIYAMOTO,  Yuhji ANDO,  Yasuhiro OKAMOTO,  Tatsuo NAKAYAMA,  Masaaki KUZUHARA,  

[Date]2003/1/9
[Paper #]ED2002-265,MW2002-152
Power Amplifier Module with Digital Adaptive Predistortion for Cellular Phone

S. Kusunoki,  K. Yamamoto,  T. Hatsugai,  K. Tagami,  N. Tominaga,  K. Osawa,  K. Tanabe,  S. Sakurai,  T. Iida,  H. Nagaoka,  

[Date]2003/1/9
[Paper #]ED2002-266,MW2002-153
A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module

Kazuya YAMAMOTO,  Tomoyuki ASADA,  Satoshi SUZUKI,  Takeshi MIURA,  Akira INOUE,  Shinichi MIYAKUNI,  Jun OTSUJI,  Ryo HATTORI,  Yukio MIYAZAKI,  Teruyuki SHIMURA,  

[Date]2003/1/9
[Paper #]ED2002-267,MW2002-154
1.1W/mm High Power GaAs/InGaP Composite Channel FET with Asymmetrical LDD structure at 26V Operation

Ken Nakata,  Ryuji Masuyama,  Shigeru Nakajima,  

[Date]2003/1/9
[Paper #]ED2002-268,MW2002-155
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[Date]2003/1/9
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[Date]2003/1/9
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