| Presentation | 2003/1/9 A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module Kazuya YAMAMOTO, Tomoyuki ASADA, Satoshi SUZUKI, Takeshi MIURA, Akira INOUE, Shinichi MIYAKUNI, Jun OTSUJI, Ryo HATTORI, Yukio MIYAZAKI, Teruyuki SHIMURA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes a 3.5-V operation HBT MMIC power amplifier module for use in GSM/EDGE dual-mode, 900/1800/1900-MHz triple band handset applications. The module consists of base-collector diode switches and a band select switch built on the MMIC as well as two HBT-MMIC power amplifiers with their bias circuits to realize dual-mode operation for GSM and EDGE. With he module delivers a output power of 35.5 dBm and a power-added efficiency (PAE) of about 50% for GSM900, a 33.4-dBm output power and a 45% PAE for GSM 1800/1900. While satisfying an error vector magnitude (EVM) of less than 4% and a receive-band noise power of less than -83 dBm/100 kHz, the module also delivers a 29.5 dBm output power and a PAE of over 25% for EDGE900, a 28.5 dBm output power and a PAE of over 25% for EDGE 1800/1900. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GSM / EDGE / Dual-mode / HBT / MMIC / Power Amplifier |
| Paper # | ED2002-267,MW2002-154 |
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| Committee | MW |
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| Conference Date | 2003/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A GSM//EDGE Dual-Mode, 900/1800/1900-MHz Triple-Band HBT-MMIC Power Amplifier Module |
| Sub Title (in English) | |
| Keyword(1) | GSM |
| Keyword(2) | EDGE |
| Keyword(3) | Dual-mode |
| Keyword(4) | HBT |
| Keyword(5) | MMIC |
| Keyword(6) | Power Amplifier |
| 1st Author's Name | Kazuya YAMAMOTO |
| 1st Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation() |
| 2nd Author's Name | Tomoyuki ASADA |
| 2nd Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 3rd Author's Name | Satoshi SUZUKI |
| 3rd Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 4th Author's Name | Takeshi MIURA |
| 4th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 5th Author's Name | Akira INOUE |
| 5th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 6th Author's Name | Shinichi MIYAKUNI |
| 6th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 7th Author's Name | Jun OTSUJI |
| 7th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 8th Author's Name | Ryo HATTORI |
| 8th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 9th Author's Name | Yukio MIYAZAKI |
| 9th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| 10th Author's Name | Teruyuki SHIMURA |
| 10th Author's Affiliation | High-Frequency & Optaical Semiconductor Division, Mitsubishi Electric Corporation |
| Date | 2003/1/9 |
| Paper # | ED2002-267,MW2002-154 |
| Volume (vol) | vol.102 |
| Number (no) | 558 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |