| Presentation | 2003/1/9 Flip-chip Distributed Amplifier with a bandwidth of 110 GHz Satoshi MASUDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We successfully developed state of the art InP HEMT distributed amplifiers by using inverted microstrip line technology. For one, we achieved a gain of 14.5 dB and a 94-GHz 3-dB bandwidth resulting in a gain-bandwidth product of 500 GHz, and for the other we achieved a gain of 7.5 dB and a 3-dB bandwidth of over 110 GHz. This technology also demonstrates the capability of fabricating ultra-broadband packaged IC's with flip-chip assembly for operation up to the W-band. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Inverted microstrip line / flip-chip / distributed amplifiers / InP HEMT |
| Paper # | ED2002-262,MW2002-149 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2003/1/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Flip-chip Distributed Amplifier with a bandwidth of 110 GHz |
| Sub Title (in English) | |
| Keyword(1) | Inverted microstrip line |
| Keyword(2) | flip-chip |
| Keyword(3) | distributed amplifiers |
| Keyword(4) | InP HEMT |
| 1st Author's Name | Satoshi MASUDA |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| Date | 2003/1/9 |
| Paper # | ED2002-262,MW2002-149 |
| Volume (vol) | vol.102 |
| Number (no) | 558 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |