Electronics-Electron Devices(Date:2007/06/08)

Presentation
表紙

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[Date]2007/6/8
[Paper #]
目次

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[Date]2007/6/8
[Paper #]
0.10 μm Ion-Implanted GaAs MESFETs with Low Cost Production Process

Masataka WATANABE,  Daiji FUKUSHI,  Hiroshi YANO,  Shigeru NAKAJIMA,  

[Date]2007/6/8
[Paper #]ED2007-31
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance

Hirotaka Amasuga,  Akira Inoue,  Seiki Goto,  Tetsuo Kunii,  Yoshitsugu Yamamoto,  Tomoki Oku,  Takahide Ishikawa,  

[Date]2007/6/8
[Paper #]ED2007-32
Study of localized spins in Be delta-doped GaAs structures

J. P. Noh,  D. W. Jung,  A. Z. M. Touhidul Islam,  N. Otsuka,  

[Date]2007/6/8
[Paper #]ED2007-33
Epitaxial lift-off of InAs thin films and their van der Waals bonding on SiO_2/Si wafers

Hayato TAKITA,  Yonkil JEONG,  Jun-ya ARITA,  Toshi-kazu SUZUKI,  

[Date]2007/6/8
[Paper #]ED2007-34
InSb films on Si(111) substrate by two-step growth

K. Murata,  N. B. Ahmad,  Y. Tamura,  M. Mori,  T. Tambo,  K. Maezawa,  

[Date]2007/6/8
[Paper #]ED2007-35
Formation of high quality InSb film via InSb bi-layer on Si substrate

Mitsufumi SAITO,  Masayuki MORI,  Yuji YAMASHITA,  Toyokazu TAMBO,  Koichi MAEZAWA,  

[Date]2007/6/8
[Paper #]ED2007-36
DC characteristics of HBT with buried SiO_2 wires in collector

Shinnosuke TAKAHASHI,  Tsukasa MIURA,  Hiroaki YAMASHITA,  Yasuyuki MIYAMOTO,  Kazuhito FURUYA,  

[Date]2007/6/8
[Paper #]ED2007-37
High-quality InP-based resonant tunneling diodes grown by MOVPE

Hiroki Sugiyama,  Hideaki Matsuzaki,  Yasuhiro Oda,  Haruki Yokoyama,  Takatomo Enoki,  Takashi Kobayashi,  

[Date]2007/6/8
[Paper #]ED2007-38
Integrated Gyrator by using Resonant Tunneling Diodes

Michihiko SUHARA,  Eri Ueki,  Tsugunori OKUMURA,  

[Date]2007/6/8
[Paper #]ED2007-39
Optical control in a triple quantum disk-waveguide structure

Masahito YAMAGUCHI,  Minori YOKOI,  Hidetoshi TAKAGI,  Nobuhiko SAWAKI,  

[Date]2007/6/8
[Paper #]ED2007-40
Current transport mechanism of metal/p-GaN contacts and its recent progress

Kenji SHIOJIMA,  

[Date]2007/6/8
[Paper #]ED2007-41
Anodic oxidation of n-GaN surface using photoelectrochemical process

Nanako SHIOZAKI,  Tamotsu HASHIZUME,  

[Date]2007/6/8
[Paper #]ED2007-42
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target

Nariaki TANAKA,  Yasunobu SUMIDA,  Toshi-kazu SUZUKI,  

[Date]2007/6/8
[Paper #]ED2007-43
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current

Kazuki NOMOTO,  Taku TAJIMA,  Tomoyoshi MISHIMA,  Masataka SATOH,  Tohru NAKAMURA,  

[Date]2007/6/8
[Paper #]ED2007-44
Electrical Properties of Al Ion Implanted 4H-SiC Layer

Masataka SATOH,  Shingo MIYAGAWA,  Takahiro KUDOH,  Shohei NAGATA,  Taku TAJIMA,  Tohru NAKAMURA,  

[Date]2007/6/8
[Paper #]ED2007-45
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring

Shuichi Ono,  Manabu Arai,  

[Date]2007/6/8
[Paper #]ED2007-46
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[Date]2007/6/8
[Paper #]
奥付

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[Date]2007/6/8
[Paper #]