Electronics-Electron Devices(Date:1999/04/22)

Presentation
表紙

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[Date]1999/4/22
[Paper #]
目次

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[Date]1999/4/22
[Paper #]
Hetero and homoepitaxial growth of GaN thin films by RF-MBE

Satoshi Kurai,  Shuuichi Kubo,  Tomokazu Okazaki,  Shigeki Manabe,  Akira Kawabe,  Taiichi Sugita,  Youichi Yamada,  Tsunemasa Taguchi,  

[Date]1999/4/22
[Paper #]ED99-1
Formation and deterioration mechanisms of low-resistance TaTi Ohmic contacts for p-GaN

Masaaki Suzuki,  Tomoyuki Arai,  Kentaro Matsunaga,  Toshiyuki Kawakami,  Yasuo Koide,  Masanori Murakami,  Toshiya Uemura,  Naoki Shibata,  Yasunori Taga,  

[Date]1999/4/22
[Paper #]ED99-2
Large Schottky barriers for p-GaN contacts

Kenji Shiojima,  Tomoya Sugahara,  Shiro Sakai,  

[Date]1999/4/22
[Paper #]ED99-3
Characterization of Insulator/GaN interfaces

Ryuusuke Nakasaki,  Tamotsu Hashizume,  Hideki Hasegawa,  

[Date]1999/4/22
[Paper #]ED99-4
Surface passivation of GaAs using magnetically excited plasma : plasma-power dependence

Keisuke Kanazawa,  Hideaki Ikoma,  

[Date]1999/4/22
[Paper #]ED99-5
Phosphidization of GaAs surface and its application to GaAs MESFET

S. Nozu,  S. Nakajima,  T. Sugino,  

[Date]1999/4/22
[Paper #]ED99-6
Fabrication of Nano-Schottky Contacts on Compound Semiconductor by Pulsed Mode Electrochemical Process and Its Characterization

Taketomo SATO,  Hiroshi OKADA,  Hideki HASEGAWA,  

[Date]1999/4/22
[Paper #]ED99-7
Low contact resistance ohmic contacts to p-GaAs using PdIn metallization

Yasushi Shiraishi,  Hidenori Shimawaki,  

[Date]1999/4/22
[Paper #]ED99-8
Control of resonant tunneling current due to buried fine metal adjacent to semiconductor heterostructures

Michihiko Suhara,  Laes-Eeik Wernersson,  Boel Gustafson,  Werner Seifert,  Lars Samuelson,  Kazuhito Furuya,  

[Date]1999/4/22
[Paper #]ED99-9
Study on improvemdnt on uniformity of Cat-CVD SiNx thin films

Akiyoshi Kudo,  Atsushi Masuda,  Akira Izumi,  Hideki Matsumura,  

[Date]1999/4/22
[Paper #]ED99-10
[OTHERS]

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[Date]1999/4/22
[Paper #]