| Presentation | 1999/4/22 Study on improvemdnt on uniformity of Cat-CVD SiNx thin films Akiyoshi Kudo, Atsushi Masuda, Akira Izumi, Hideki Matsumura, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | SiNx thin-film deposition by catalytic CVD (Cat-CVD) method is expected to realize a 1ow-damage plasmaldss process in fabrication of passivation fi1ms for compound-semiconductor devices etc. A tungsten wire was used as a catalyzer to decompose SiH_4 and NH_3 gases, SiNx thin films were deposited on GaAs substrates, and the uniformity of well-stoichiometric (Si_3N_4) films, with about 2.0 in refractive index, was evaluated by ellipsometry. It was found that the film thickness decreases about 15% circumferentially from the center, but the uniformity of refractive index keeps within about ±2.5% in a 4-inch wafer even though Si and N are supplied seperately. It is confirmed that preparation of device-quality SiNx thin films on large substrates can be achieved by Cat-CVD method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Catalytic CVD (Cat-CVD) method / SiNx thin film / Passivation film / Refractive index / Uniformity |
| Paper # | ED99-10 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on improvemdnt on uniformity of Cat-CVD SiNx thin films |
| Sub Title (in English) | |
| Keyword(1) | Catalytic CVD (Cat-CVD) method |
| Keyword(2) | SiNx thin film |
| Keyword(3) | Passivation film |
| Keyword(4) | Refractive index |
| Keyword(5) | Uniformity |
| 1st Author's Name | Akiyoshi Kudo |
| 1st Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST):Mitsubishi Electric Corp() |
| 2nd Author's Name | Atsushi Masuda |
| 2nd Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST) |
| 3rd Author's Name | Akira Izumi |
| 3rd Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST) |
| 4th Author's Name | Hideki Matsumura |
| 4th Author's Affiliation | Japan Advanced Institute of Science and Technology (JAIST) |
| Date | 1999/4/22 |
| Paper # | ED99-10 |
| Volume (vol) | vol.99 |
| Number (no) | 21 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |