| Presentation | 1999/4/22 Large Schottky barriers for p-GaN contacts Kenji Shiojima, Tomoya Sugahara, Shiro Sakai, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Large Schottky barriers were measured for Ni contacts formed on low Mg-doped p-GaN.In order to improve 1eaky Schottky characteristics, 1ow-Mg-doping was examined. This provided atomically-flat suffaces and 1ow dislocation density of 5.5 X10^8 cm^-2. The Schottky barrier height (qφB ) as high as 2.4+0.2 eV and n va1ues of 1.84+0.06 were obtained from current-voltage measurements. These resu1ts are in good agreement with the prediction that the sum of qφs of n and p types adds up to the band gap. In the capacitance-voltage measurements, a transient response of capaditance was observed. This indicates that the eva1uation of deep 1evels close to the va1ence band is possible, which could result in improvement of p-GaN growth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-GaN / metal/semiconductor contrt / Schottky barrier height / low Mg doping |
| Paper # | ED99-3 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1999/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Large Schottky barriers for p-GaN contacts |
| Sub Title (in English) | |
| Keyword(1) | p-GaN |
| Keyword(2) | metal/semiconductor contrt |
| Keyword(3) | Schottky barrier height |
| Keyword(4) | low Mg doping |
| 1st Author's Name | Kenji Shiojima |
| 1st Author's Affiliation | NTT Photonics Labofatories() |
| 2nd Author's Name | Tomoya Sugahara |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| 3rd Author's Name | Shiro Sakai |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokushima University |
| Date | 1999/4/22 |
| Paper # | ED99-3 |
| Volume (vol) | vol.99 |
| Number (no) | 21 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |