Electronics-Electron Devices(Date:1997/01/24)

Presentation
表紙

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[Date]1997/1/24
[Paper #]
目次

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[Date]1997/1/24
[Paper #]
A 1.9GHz Si Low Distortion Down Mixer

Hiroshi KOMURASAKI,  Nagisa SASAKI,  Hisayasu SATO,  Shunji KUBO,  Takahiro MIKI,  

[Date]1997/1/24
[Paper #]ED96-197,MW96-160,IDC96-185
A 1.9-GHz Si-Bipolar Variable Attenuator for PHS Transmitter

Shoji Otaka,  Hiroshi Tanimoto,  Shuji Watanabe,  Tadahiko Maeda,  

[Date]1997/1/24
[Paper #]ED96-198,MW96-161,IDC96-186
Small-Sized Power Heterojunction FETs for 3.4V Digital Cellular Applications

Naotaka Iwata,  Masatoshi Tomita,  Keiko Yamaguchi,  Hirokazu Oikawa,  Masaaki Kuzuhara,  

[Date]1997/1/24
[Paper #]ED96-199,MW96-162,IDC96-187
High Power-added Efficiency and Low Distortion GaAs Power FET Employing Spike-gate Structure

H Furukawa,  T Tanaka,  H Takenaka,  T Ueda,  T Fukui,  D Ueda,  

[Date]1997/1/24
[Paper #]ED96-200,MW96-163,IDC96-188
50W Low Distortion GaAs MESFET for Digital Cellular Base Stations

Fuminobu Ono,  Zenzo Singu,  Kazunori Asano,  Junko Morikawa,  Masaaki Kuzuhara,  Fumiaki Emori,  

[Date]1997/1/24
[Paper #]ED96-201,MW96-164,IDC96-189
Large Signal Simulations of 900MHz band Power MOSFETs

Noriaki Matuno,  Hitoshi Yano,  Yasuyuki Suzuki,  Toshiaki Inoue,  Tetsu Toda,  Yasushi Kose,  Kazuhiko Honjo,  

[Date]1997/1/24
[Paper #]ED96-202,MW96-165,IDC96-190
High-Frequency Performance of Highly Reliable AlAs/InAs Superlattice Inserted InAlAs/InGaAs HJFETs

A Fujihara,  K Onda,  A Wakejima,  M Mizuki,  T Nakayama,  H Miyamoto,  Y Ando,  M Kuzuhara,  M Kanamori,  

[Date]1997/1/24
[Paper #]ED96-203,MW96-166,IDC96-191
Advanced Millimeter-Wave Flip-Chip ICs using BCB Dielectric

Hiroyuki Sakai,  Takayuki Yoshida,  Yoshito Ikeda,  Suguru Fujita,  Kazuaki Takahashi,  Morikazu Sagawa,  Kaoru Inoue,  

[Date]1997/1/24
[Paper #]ED96-204,MW96-167,IDC96-192
Effects of Buried p-Layers on Substrate-Trap Induced Phenomena in GaAs MESFETs

Kazuaki Kunihiro,  Masanobu Nogome,  Yasuo Ohno,  

[Date]1997/1/24
[Paper #]ED96-205,MW96-168,IDC96-193
2-D Numerical Analysis of Gate-Lag Phenomena in GaAs MESFETs

T Yamada,  A Wakabayashi,  K Horio,  

[Date]1997/1/24
[Paper #]ED96-206,MW96-169,IDC96-194
IMPROVEMENT OF InGaP/GaAs HETEROINTERFACE QUALITY BY CONTROLLING AsH_3 FLOW CONDITIONS

Yoshino K Fukai,  Fumiaki Hyuga,  Takumi Nittono,  Kazuo Watanabe,  Hirohiko Sugahara,  

[Date]1997/1/24
[Paper #]ED96-207,MW96-170,IDC96-195
Characterization of InGaP/GaAs heterointerface grown by MOVPE

T Kikkawa,  K Imanishi,  K Fukuzawa,  T Tanaka,  

[Date]1997/1/24
[Paper #]ED96-208,MW96-171,IDC96-196
[OTHERS]

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[Date]1997/1/24
[Paper #]