| Presentation | 1997/1/24 High-Frequency Performance of Highly Reliable AlAs/InAs Superlattice Inserted InAlAs/InGaAs HJFETs A Fujihara, K Onda, A Wakejima, M Mizuki, T Nakayama, H Miyamoto, Y Ando, M Kuzuhara, M Kanamori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Thermal stability of the InAlAs/InGaAs Heterojunction FET (HJFET) structure has been greatly improved by introducing an optimal 7 periods of AlAs(4ML)InAs(4ML) superlattice in the InAlAs Schottky layer, thus significantly reducing impurity (fluorine) incorporation in the n-InAlAs layer. The superlattice inserted transistors (SPRINT) with a 0.15μ m-gate exhibited excellent DC and RF characteristics (gm=650mS/mm @Vd=0.75V, BVgd>8V, f_T=155GHz, Fmin/Ga=0.38dB/15.8dB @12GHz) identical to a conventional InAlAs/InGaAs HJFET. These results demonstrate that the SPRINT structure, designed for reliability improvement, also exhibits excellent RF performance. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | heterojunction FET / superlattice / InAlAs / thermal stability / fluorine |
| Paper # | ED96-203,MW96-166,IDC96-191 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1997/1/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Frequency Performance of Highly Reliable AlAs/InAs Superlattice Inserted InAlAs/InGaAs HJFETs |
| Sub Title (in English) | |
| Keyword(1) | heterojunction FET |
| Keyword(2) | superlattice |
| Keyword(3) | InAlAs |
| Keyword(4) | thermal stability |
| Keyword(5) | fluorine |
| 1st Author's Name | A Fujihara |
| 1st Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp.() |
| 2nd Author's Name | K Onda |
| 2nd Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 3rd Author's Name | A Wakejima |
| 3rd Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 4th Author's Name | M Mizuki |
| 4th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 5th Author's Name | T Nakayama |
| 5th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 6th Author's Name | H Miyamoto |
| 6th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 7th Author's Name | Y Ando |
| 7th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| 8th Author's Name | M Kuzuhara |
| 8th Author's Affiliation | ULSI Device Development Laboratories., NEC Corp. |
| 9th Author's Name | M Kanamori |
| 9th Author's Affiliation | Kansai Electronics Research Laboratories, NEC Corp. |
| Date | 1997/1/24 |
| Paper # | ED96-203,MW96-166,IDC96-191 |
| Volume (vol) | vol.96 |
| Number (no) | 462 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |