Presentation 1997/1/24
A 1.9GHz Si Low Distortion Down Mixer
Hiroshi KOMURASAKI, Nagisa SASAKI, Hisayasu SATO, Shunji KUBO, Takahiro MIKI,
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Abstract(in English) This paper desclibes a 1.9GHz Si Low Distortion Down Mixer in a Bipolar process with 20GHz npn. An inductor on silicon is used as an emitter degeneration element of a lower emitter coupled pair in a Gilbert cell. The nonlinearity is reduced because the value of emitter degeneration is large on the higher frequency. By reducing the hurmonic distortion of RF signal, the output IM3 power of the mixer is small and the 3rd-order intercept point is improved.
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Keyword(in English) bipolar / down mixer / inductor / low distortion / L-band
Paper # ED96-197,MW96-160,IDC96-185
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Committee ED
Conference Date 1997/1/24(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) A 1.9GHz Si Low Distortion Down Mixer
Sub Title (in English)
Keyword(1) bipolar
Keyword(2) down mixer
Keyword(3) inductor
Keyword(4) low distortion
Keyword(5) L-band
1st Author's Name Hiroshi KOMURASAKI
1st Author's Affiliation System LSI Laboratory, Mitsubishi Electric Corp.()
2nd Author's Name Nagisa SASAKI
2nd Author's Affiliation System LSI Laboratory, Mitsubishi Electric Corp.
3rd Author's Name Hisayasu SATO
3rd Author's Affiliation System LSI Laboratory, Mitsubishi Electric Corp.
4th Author's Name Shunji KUBO
4th Author's Affiliation System LSI Laboratory, Mitsubishi Electric Corp.
5th Author's Name Takahiro MIKI
5th Author's Affiliation System LSI Laboratory, Mitsubishi Electric Corp.
Date 1997/1/24
Paper # ED96-197,MW96-160,IDC96-185
Volume (vol) vol.96
Number (no) 462
Page pp.pp.-
#Pages 7
Date of Issue