Electronics-Electron Devices(Date:1996/11/08)

Presentation
表紙

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[Date]1996/11/8
[Paper #]
目次

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[Date]1996/11/8
[Paper #]
Surface passivation of compound semiconductors by phosphidization

T. Sugino,  J. Shirafuji,  

[Date]1996/11/8
[Paper #]ED96-112
High Schottky Barrier Formation on Indium Phosphide-Based Materials by In-Situ Electrochemical Process

Taketomo SATO,  Tamotsu HASHIZUME,  Hideki HASEGAWA,  

[Date]1996/11/8
[Paper #]ED96-113
Uniformity and Interface Structure of Selectively Oxidized GaAs/AlAs Multilayer

T. Takamori,  T. Kamijoh,  

[Date]1996/11/8
[Paper #]ED96-114
Surface passivation of AlGaAs surfaces by silicon interface control layer

K. Ikeya,  T. Hashizume,  H. Hasegawa,  

[Date]1996/11/8
[Paper #]ED96-115
Fabrication of InGaAs InAlAs Quantum Wire and Quantum Dot Structures on Patterned InP Substrates by Selective Molecular Beam Epitaxy

Yuuki Hanada,  Moriaki Araki,  Hajime Fujikura,  Hideki Hasegawa,  

[Date]1996/11/8
[Paper #]ED96-116
Fabrication of Self-Assembled InAs Dots on Patterned GaAs Substrates and Its Device Application

Arata Tanimura,  Toshiya Saitoh,  Kanji Yoh,  

[Date]1996/11/8
[Paper #]ED96-117
Electronic Structure of InAs Ultrathin Layers on GaAs(311)

Toshio Saito,  

[Date]1996/11/8
[Paper #]ED96-118
Electron Wave Interference Device using Multiatomic Steps

Masashi AKABORI,  Junichi MOTOHISA,  Tomoki IRISAWA,  Shinjiroh Hara,  Jun-ya ISHIZAKI,  Takashi FUKUI,  

[Date]1996/11/8
[Paper #]ED96-119
[OTHERS]

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[Date]1996/11/8
[Paper #]