| Presentation | 1996/11/8 Fabrication of Self-Assembled InAs Dots on Patterned GaAs Substrates and Its Device Application Arata Tanimura, Toshiya Saitoh, Kanji Yoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report on the self-assembled molecular beam epitaxial (MBE) growth of InAs dots on patterned GaAs Substrates by Stranski-Krastanow growth mode. GaAs substrates were patterned by wet-chemical ething using conventional optical lithography and electron beam lithography. Self-assembled InAs dot growth was confirmed to grow on V-groove shaped substrates. InAs dots were found to be selectively grown on both substrates by AFM. As for the growth on (100) substrates, InAs dots were found to be arrayed on ridge of the V-grooves. Its size were found to be about 80nm in width and 10nm in height. Photoluminescence (PL) measurements detected a strong peak at 1.23eV from the dots on the ridge. These results suggest that self-assembled InAs dots can be grown and arrayed regularly on patterned substrates with certain accuracy. A novel device structure using the regularly arrayed InAs dot was proposed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Stranski-Krastanow growth mode / Self-assembled dot / InAs |
| Paper # | ED96-117 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/11/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Self-Assembled InAs Dots on Patterned GaAs Substrates and Its Device Application |
| Sub Title (in English) | |
| Keyword(1) | Stranski-Krastanow growth mode |
| Keyword(2) | Self-assembled dot |
| Keyword(3) | InAs |
| 1st Author's Name | Arata Tanimura |
| 1st Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Toshiya Saitoh |
| 2nd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Kanji Yoh |
| 3rd Author's Affiliation | Research Center for Interface Quantum Electronics, Hokkaido University |
| Date | 1996/11/8 |
| Paper # | ED96-117 |
| Volume (vol) | vol.96 |
| Number (no) | 352 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |