Electronics-Electron Devices(Date:1996/04/25)

Presentation
表紙

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[Date]1996/4/25
[Paper #]
目次

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[Date]1996/4/25
[Paper #]
Atom Electronics : A proposal of nano-scale devices based on atom/molecule switching

Yasuo Wada,  

[Date]1996/4/25
[Paper #]ED-96-1,SDM-96-1
Quantum-Effect Electron Devices Using Metal(CoSi_2)/Insulator(CaF_2)/Si Heterostructures

M. Asada,  M. Watanabe,  T. Suemasu,  Y. Kohno,  W. Saitoh,  K. Mori,  

[Date]1996/4/25
[Paper #]ED-96-2,SDM-96-2
Optical properties of tetragonal germanium ultrafine particles fabricated by the cluster-beam evaporation technique

Shinji Nozaki,  Seiichi Sato,  Hiroshi Morisaki,  

[Date]1996/4/25
[Paper #]ED-96-3,SDM-96-3
Effects of simulated annealing in the resonant-tunneling resistive-fuse network for early vision

Koichi Maezawa,  

[Date]1996/4/25
[Paper #]ED-96-4,SDM-96-4
Quantitative Evaluation of Size Fluctuations in Si-nanoscale devices

M. Nagase,  H. Namatsu,  K. Kurihara,  T. Ishiyama,  Y. Takahashi,  K. Murase,  T. Makino,  

[Date]1996/4/25
[Paper #]ED-96-5,SDM-96-5
Room Temperature Observation of Coulomb Blockade Oscillations in a Si Very Small MOSFET Fabricated by Anisotropic Etching

Hiroki Ishikuro,  Toshiro Hiramoto,  Tomoyuki Fujii,  Takuya Saraya,  Gen Hashiguchi,  Toshiaki Ikoma,  

[Date]1996/4/25
[Paper #]ED-96-6,SDM-96-6
Proximity Effect Correction in Cell Projection EB Direct Writing

K. Nakajima,  T. Tamura,  Y. Yamada,  H. Nozue,  

[Date]1996/4/25
[Paper #]ED-96-7,SDM-96-7
Electron tunneling from the edge of a thin SIMOX-Si layer through SiO_2 barrier

Yukinori Ono,  Yasuo Takahashi,  Seiji Horiguchi,  Katsumi Murase,  Michiharu Tabe,  

[Date]1996/4/25
[Paper #]ED-96-8,SDM-96-8
Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment

Mitsuaki Nagasaka,  Jun Kikuchi,  Shuizo Fujimura,  Hiroshi Yano,  Yasuhiro Horiike,  

[Date]1996/4/25
[Paper #]ED-96-9,SDM-96-9
Quantum chemical study for the formation and desorption processes of SiO molecule in the silicon surface oxidation reaction

Akira Endou,  Ryo Yamauchi,  Momoji Kubo,  Andras Stirling,  Akira Miyamoto,  Kazutaka Nakamura,  Masahiro Kitajima,  

[Date]1996/4/25
[Paper #]ED-96-10,SDM-96-10
A study for thermal desorption behavior of adsorbing materials on Si substrate surface

Tomoko Jinbo,  Katuhiko Ishikawa,  Masaki Ito,  Ken Tsugane,  Yoshikazu Tanabe,  Yoshio Saito,  Hideki Tomioka,  

[Date]1996/4/25
[Paper #]ED-96-11,SDM-96-11
Periodic density functional calculations on Si surface

Andras Stirling,  Akira Endou,  Ryo Yamauchi,  Momoji Kubo,  Akira Miyamoto,  Tadahiro Ohmi,  

[Date]1996/4/25
[Paper #]ED-96-12,SDM-96-12
Adsorption of IPA on Chemically treated Si surfaces

N. Miyata,  H. Kojiri,  S. Okamura,  T. Hisatugu,  

[Date]1996/4/25
[Paper #]ED-96-13,SDM-96-13
Development of Molecular Dynamics Calculation Software with Virtual Reality and its Application to the Dynamics of Crystal Growth Processes.

Ryuji Miura,  Ryo Yamauchi,  Momoji Kubo,  Akira Miyamoto,  

[Date]1996/4/25
[Paper #]ED-96-14,SDM-96-14
Al reflow behavior under noble gas irradiaton investigated by molecular dynamics meyhod

Ryo Yamauchi,  Momoji Kubo,  Andras Stirling,  Akira Miyamoto,  Tadaihiro Ohmi,  

[Date]1996/4/25
[Paper #]ED-96-15,SDM-96-15
[OTHERS]

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[Date]1996/4/25
[Paper #]