| Presentation | 1996/4/25 Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment Mitsuaki Nagasaka, Jun Kikuchi, Shuizo Fujimura, Hiroshi Yano, Yasuhiro Horiike, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Native oxide was removed from silicon surfaces by NF_3-added hydrogen and water-vapor plasma downstream treatment. It took 45 s to remove native oxide from a 6-inch silicon wafer. Fourier transform infrared attenuated total reflection (FT-IR ATR) measurement revealed that the surface roughness after the downstream treatment was the same as that after wet cleaning with 27% HF solution. A silicon epitaxial layer was grown on the surface cleaned by the downstream treatment. Although process temperature was as low as 100℃, the present downstream treatment induced the same effect as in situ hydrogen annealing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | silicon surface / dry cleaning / native oxide removal / hydrogen termination / FT-IR ATR / XPS / particle / silicon epitaxy |
| Paper # | ED-96-9,SDM-96-9 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/4/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Cleaning of Silicon Surfaces by NF_3-Added Hydrogen and Water-Vapor Plasma Downstream Treatment |
| Sub Title (in English) | |
| Keyword(1) | silicon surface |
| Keyword(2) | dry cleaning |
| Keyword(3) | native oxide removal |
| Keyword(4) | hydrogen termination |
| Keyword(5) | FT-IR ATR |
| Keyword(6) | XPS |
| Keyword(7) | particle |
| Keyword(8) | silicon epitaxy |
| 1st Author's Name | Mitsuaki Nagasaka |
| 1st Author's Affiliation | Manufacturing Technology Division, Fujitsu Ltd.() |
| 2nd Author's Name | Jun Kikuchi |
| 2nd Author's Affiliation | Process Development Division, Fujitsu Ltd. |
| 3rd Author's Name | Shuizo Fujimura |
| 3rd Author's Affiliation | Process Development Division, Fujitsu Ltd. |
| 4th Author's Name | Hiroshi Yano |
| 4th Author's Affiliation | Manufacturing Technology Division, Fujitsu Ltd. |
| 5th Author's Name | Yasuhiro Horiike |
| 5th Author's Affiliation | Department of Electrical and Electronics Engineering, Toyo University |
| Date | 1996/4/25 |
| Paper # | ED-96-9,SDM-96-9 |
| Volume (vol) | vol.96 |
| Number (no) | 18 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |