| Presentation | 1996/4/25 A study for thermal desorption behavior of adsorbing materials on Si substrate surface Tomoko Jinbo, Katuhiko Ishikawa, Masaki Ito, Ken Tsugane, Yoshikazu Tanabe, Yoshio Saito, Hideki Tomioka, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The influence of organic contamination on dielectric breakdown of gate oxide was evaluated. Wafer process without air-exposure through gate-oxidation to polySi CVD decreased the defect density. It has been proved by using thermal desorption spectrum-atomospheric pressre ionization mass spectrometer that the origin of organic contamination onto wafer surfaces was outgases from plastic casette boxes, and the organic contamination could not be removed from the wafer surface in polySi CVD process. We suppose these organic contamination between gate oxide and polySi electrode cause the degradation of GOI. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | gate-oxide / defect density / organic contamination / thermal desorption analysis |
| Paper # | ED-96-11,SDM-96-11 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 1996/4/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study for thermal desorption behavior of adsorbing materials on Si substrate surface |
| Sub Title (in English) | |
| Keyword(1) | gate-oxide |
| Keyword(2) | defect density |
| Keyword(3) | organic contamination |
| Keyword(4) | thermal desorption analysis |
| 1st Author's Name | Tomoko Jinbo |
| 1st Author's Affiliation | Device Development Center, Hitachi.Ltd.() |
| 2nd Author's Name | Katuhiko Ishikawa |
| 2nd Author's Affiliation | Semiconductor & Integrated Circuits Div, Hitachi, Ltd. |
| 3rd Author's Name | Masaki Ito |
| 3rd Author's Affiliation | Semiconductor & Integrated Circuits Div, Hitachi, Ltd. |
| 4th Author's Name | Ken Tsugane |
| 4th Author's Affiliation | Device Development Center, Hitachi.Ltd. |
| 5th Author's Name | Yoshikazu Tanabe |
| 5th Author's Affiliation | Device Development Center, Hitachi.Ltd. |
| 6th Author's Name | Yoshio Saito |
| 6th Author's Affiliation | Device Development Center, Hitachi.Ltd. |
| 7th Author's Name | Hideki Tomioka |
| 7th Author's Affiliation | Device Development Center, Hitachi.Ltd. |
| Date | 1996/4/25 |
| Paper # | ED-96-11,SDM-96-11 |
| Volume (vol) | vol.96 |
| Number (no) | 18 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |