Electronics-Electron Devices(Date:1993/11/19)

Presentation
表紙

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[Date]1993/11/19
[Paper #]
目次

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[Date]1993/11/19
[Paper #]
Growth of GaInSb bulk alloy with homogeneous composition

Akiyoshi Watanabe,  Hironobu Katsuno,  Akira Tanaka,  Tokuzo Sukegawa,  

[Date]1993/11/19
[Paper #]ED93-120,CPM93-91
MOMBE Growth and Characterization of ZnMgSSe

Jun Suda,  Yoichi Kawakami,  Shizuo Fujita,  Shigeo Fujita,  

[Date]1993/11/19
[Paper #]ED93-121,CPM93-92
The dependence of GaAs substrate orientation on InAs growth

Jeong-Sik Lee,  Takayuki Shima,  Kazuhiro Kudo,  Kuniaki Tanaka,  Shigeru Niki,  Akimasa Yamada,  Yunosuke Makita,  

[Date]1993/11/19
[Paper #]ED93-122,CPM93-93
Direct growth of AlGaAs/GaAs quantum wells on GaAs substrates after ECR hydrogen plasma cleaning.

Naoto Kondo,  Yasushi Nanishi,  Masatomo Fujimoto,  

[Date]1993/11/19
[Paper #]ED93-123,CPM93-94
OMVPE Growth of AlP/GaP Monolayer Superlattices

Akihiro Wakahara,  Xue Lun Wang,  Yoichi Nabetani,  Akio Sasaki,  

[Date]1993/11/19
[Paper #]ED93-124,CPM93-95
Improvement of smoothness at In_0.52>Al_0.48>As/In_0.8>Ga_0.2> As interfaces by In_0.53>Ga_0.47>As insertion

Tatsuo Nakayama,  Hironobu Miyamoto,  Emi Oishi,  Norihiko Samoto,  

[Date]1993/11/19
[Paper #]ED93-125,CPM93-96
Determination of radiation region by polarization resolved photoluminescence for InAs/GaAs quantum structures

Takayuki Shima,  Jeong-Sik Lee,  Kazuhiro Kudo,  Kuniaki Tanaka,  Shigeru Niki,  Akimasa Yamada,  Yunosuke Makita,  

[Date]1993/11/19
[Paper #]ED93-126,CPM93-97
Characterization of Strained InGaAs/GaAs Structures using Spectroscopic Ellipsometry

Yukimune Watanabe,  Tadashi Saitoh,  

[Date]1993/11/19
[Paper #]ED93-127,CPM93-98
Electric field effect for optical transitions in In GaAs/GaAs strained layer superlattices

Takashi Kita,  Hiroshi Nakayama,  Taneo Nishino,  

[Date]1993/11/19
[Paper #]ED93-128,CPM93-99
Artificial Control of Band Discontinuity at (311)A GaAs/AlAs Heterointerface

Toshio Saito,  Yoshio Hashimoto,  Toshiaki Ikoma,  

[Date]1993/11/19
[Paper #]ED93-129,OPM93-100
Interdiffusion of InGaAs/InAlAs quantum well structures using ion implantation

Shin'ichi Yamamura,  Kazuhisa Suzuki,  Riichiro Saito,  Shigemi Yugo,  Tadamasa Kimura,  Takeshi Kamiya,  Michio Murata,  

[Date]1993/11/19
[Paper #]ED93-130,CPM93-101
Design of Very Sensitive Heterojunction Phototransistor for Optoelectronic Integrated Devices by Using 2-D Simulation

Vahid Ahamadi,  Susumu Noda,  Akio Sasaki,  

[Date]1993/11/19
[Paper #]ED93-131,CPM93-102
Mechanism of Kink Effect in AlGaAs/InGaAs Heterojunction FETs

Yasuko Hori,  Masaaki Kuzuhara,  

[Date]1993/11/19
[Paper #]ED93-132,CPM93-103
Highly Reliable Ohmic Contacts for InAlAs/InGaAs Heterojunction FETs

Emiko Mizuki,  Kazuhiko Onda,  Hironobu Miyamoto,  Norihiko Samoto,  Masaaki Kuzuhara,  

[Date]1993/11/19
[Paper #]ED93-133,CPM93-104
[OTHERS]

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[Date]1993/11/19
[Paper #]