| Presentation | 1993/11/19 Mechanism of Kink Effect in AlGaAs/InGaAs Heterojunction FETs Yasuko Hori, Masaaki Kuzuhara, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have investigated the kink effect in AlGaAs, InGaAs HJFET in terms of optical wavelength,temperature and gate voltage.The drain current value measured at the drain voltage lower than the kink voltage was found to increase by irradiating white light onto the device,indicating the disappearance of kink by electron-hole generation.The degree of kink disappearance exhibited a significant optical wavelength dependence.We also found that the kink disappears with increasing temperature.In addition,the degree of the kink effect decreases with increasing gate bias in the region of Vg>0V.These results suggest that the appearance of kink is related to the holes captured by hole traps in AlGaAs donor layer,as well as to electron-hole pair generation in the InGaAs channel layer caused by impact ionization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HJFET / kink effect / impact ionization / hole trap / AlGaAs donor layer |
| Paper # | ED93-132,CPM93-103 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/11/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Mechanism of Kink Effect in AlGaAs/InGaAs Heterojunction FETs |
| Sub Title (in English) | |
| Keyword(1) | HJFET |
| Keyword(2) | kink effect |
| Keyword(3) | impact ionization |
| Keyword(4) | hole trap |
| Keyword(5) | AlGaAs donor layer |
| 1st Author's Name | Yasuko Hori |
| 1st Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation() |
| 2nd Author's Name | Masaaki Kuzuhara |
| 2nd Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| Date | 1993/11/19 |
| Paper # | ED93-132,CPM93-103 |
| Volume (vol) | vol.93 |
| Number (no) | 326 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |