| Presentation | 1993/11/19 Highly Reliable Ohmic Contacts for InAlAs/InGaAs Heterojunction FETs Emiko Mizuki, Kazuhiko Onda, Hironobu Miyamoto, Norihiko Samoto, Masaaki Kuzuhara, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have evaluated ohmic contact characteristics for InAlAs, InGaAs heterojunction FETs and their thermal stability.Three structures of ohmic metals were investigated,which consist of AuGe/ Ni/Au for an alloyed ohmic contact,Ti/Pt/Au and Mo/Ti/Pt/Au for a non-alloyed ohmic contact.The Mo/Ti/Pt/Au ohmic metal system has shown a contact resistance of 0.05Ωmm,which is comparable to the c onventional AuGe/Ni/Au and Ti/Pt/Au ohmic systems.These contact resistance values of the AuGe/Ni/Au and Ti/Pt/Au systems degraded after a heat treatment at 350℃ for 5minutes,while the low contact resistance of the Mo/Ti/Pt/Au system maintained its low resistance after the same heat treatment.The AES analysis shows that the Mo layer is effective to suppress interdiffusion between the ohmic metals and InGaAs.These results indicate great potential of the highly reliable Mo/Ti/Pt/Au non-alloyed ohmic technology for InAlAs/InGaAs heterojunction FETS. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | molybdenum / ohmic / InGaAs / InAlAs / contact resistance / FET |
| Paper # | ED93-133,CPM93-104 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 1993/11/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly Reliable Ohmic Contacts for InAlAs/InGaAs Heterojunction FETs |
| Sub Title (in English) | |
| Keyword(1) | molybdenum |
| Keyword(2) | ohmic |
| Keyword(3) | InGaAs |
| Keyword(4) | InAlAs |
| Keyword(5) | contact resistance |
| Keyword(6) | FET |
| 1st Author's Name | Emiko Mizuki |
| 1st Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation() |
| 2nd Author's Name | Kazuhiko Onda |
| 2nd Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 3rd Author's Name | Hironobu Miyamoto |
| 3rd Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 4th Author's Name | Norihiko Samoto |
| 4th Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| 5th Author's Name | Masaaki Kuzuhara |
| 5th Author's Affiliation | Kansai Electronics Research Laboratory,NEC Corporation |
| Date | 1993/11/19 |
| Paper # | ED93-133,CPM93-104 |
| Volume (vol) | vol.93 |
| Number (no) | 326 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |