IEICE Technical Committee

Electronics-Component Parts and Materials(Date:2023/11/30)

Presentation

Device characteristics of AlGaInN/GaN HEMTs with a thin UID-GaN channel fabricated on single-crystal AlN substrate

Tomoyuki Kawaide(Nagoya Inst. Tech), Yoshinobu Kometani(Nagoya Inst. Tech), Sakura Tanaka(Nagoya Inst. Tech), Takashi Egawa(Nagoya Inst. Tech), Makoto Miyoshi(Nagoya Inst. Tech),

[Date]2023-11-30
[Paper #]ED2023-14,CPM2023-56,LQE2023-54

Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system

Takahiro Fujiawa(Nagoya Inst. Tech.), Nan Hu(Nagoya Inst. Tech.), Tomoki Kojima(Nagoya Inst. Tech.), Takashi Egawa(Nagoya Inst. Tech.), Makoto Miyoshi(Nagoya Inst. Tech.),

[Date]2023-11-30
[Paper #]ED2023-23,CPM2023-65,LQE2023-63

Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

Haruto Yoshimura(Fukui univ.), Hiroki Imabayashi(Fukui univ.), Fumimasa Horikiri(Sumitomo Chem.), Yoshinobu Narita(Sumitomo Chem.), Hajime Fujikura(Sumitomo Chem.), Hiroshi Ohta(Hosei Univ.), Tomoyoshi Mishima(Hosei Univ.), Kenji Shiojima(Fukui univ.),

[Date]2023-11-30
[Paper #]ED2023-18,CPM2023-60,LQE2023-58

Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base

Masaya Takimoto(Nagoya Inst.Tech.), Akira Mase(Nagoya Inst.Tech.), Kojima tomoki(Nagoya Inst.Tech.), Egawa Takashi(Nagoya Inst.Tech.), Miyoshi Makoto(Nagoya Inst.Tech.),

[Date]2023-11-30
[Paper #]ED2023-15,CPM2023-57,LQE2023-55

Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation

Haruyoshi Miyawaki(Kyoto Univ.), Yoshinobu Matsuda(Kyoto Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2023-11-30
[Paper #]ED2023-21,CPM2023-63,LQE2023-61

Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures

Shogo Fukushige(Kyoto Univ.), Yoshinobu Matsuda(Kyoto Univ.), Mitsuru Funato(Kyoto Univ.), Yoichi Kawakami(Kyoto Univ.),

[Date]2023-11-30
[Paper #]ED2023-22,CPM2023-64,LQE2023-62

Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD

Toshiharu Kubo(Nagoya Inst. of Technol.), Takashi Egawa(Nagoya Inst. of Technol.),

[Date]2023-11-30
[Paper #]ED2023-16,CPM2023-58,LQE2023-56

Formation of p-type GaN by Mg thermal diffusion and challenges for device applications

Yuta Itoh(Nagoya Univ.), Hirotaka Watanabe(Nagoya Univ.), Manato Deki(Nagoya Univ.), Shugo Nitta(Nagoya Univ.), Atsushi Tanaka(Nagoya Univ.), Yoshio Honda(Nagoya Univ.), Hiroshi Amano(Nagoya Univ.),

[Date]2023-11-30
[Paper #]ED2023-19,CPM2023-61,LQE2023-59

Growth of low carbon density GaN on (0001) plane by MOVPE

Hirotaka Watanabe(Nagoya Univ.), Shugo Nitta(Nagoya Univ.), Naoki Fujimoto(Nagoya Univ.), Seiya Kawasaki(Nagoya Univ.), Takeru Kumabe(Nagoya Univ.), Kazuki Ohnishi(Nagoya Univ.), Yoshio Honda(Nagoya Univ.), Hiroshi Amano(Nagoya Univ.),

[Date]2023-11-30
[Paper #]ED2023-20,CPM2023-62,LQE2023-60

Steam Oxidation Technique for Defect Reduction on ALD-Al2O3 Insulated-gate structures

Shiro Ozaki(Fujitsu), Yusuke Kumazaki(Fujitsu), Naoya Okamoto(Fujitsu), Yasuhiro Nakasya(Fujitsu), Toshihiro Tagi(Fujitsu), Naoki Hara(Fujitsu),

[Date]2023-11-30
[Paper #]ED2023-17,CPM2023-59,LQE2023-57

Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials

Keito Mori-Tamamura(Kanazawa Inst. Tech), Atsushi A. Yamaguchi(Kanazawa Inst. Tech), Tomohiro Makino(Sony Semiconductor Solutions), Maho Ohara(Sony Semiconductor Solutions), Tatsushi Hamaguchi(Sony Semiconductor Solutions), Rintaro Koda(Sony Semiconductor Solutions),

[Date]2023-12-01
[Paper #]ED2023-26,CPM2023-68,LQE2023-66

Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on Stripecore GaN Substrate

Syoki Jinno(Kanazawa Inst. of Tech.), Keito Mori-Tamamura(Kanazawa Inst. of Tech.), Atsushi A. Yamaguchi(Kanazawa Inst. of Tech.), Susumu Kusanagi(Sony Semiconductor Solutions Corp.), Yuya Kanitani(Sony Semiconductor Solutions Corp.), Shigetaka Tomiya(Sony Semiconductor Solutions Corp.), Yoshihiro Kudo(Sony Semiconductor Solutions Corp.),

[Date]2023-12-01
[Paper #]ED2023-25,CPM2023-67,LQE2023-65

Z-scheme formation of visible light photocatalyst g-C3N4/SnS2

Yohei Mori(Shizuoka Univ), Baskar Malathi(Shizuoka Univ), Atsushi Nakamura(Shizuoka Univ),

[Date]2023-12-01
[Paper #]ED2023-28,CPM2023-70,LQE2023-68

The properties of UV-B laser diodes on AlN nanopillars by using wet etching method

Yoshinori Imoto(Meijo Univ), Ryosuke Kondo(Meijo Univ), Ryoya Yamada(Meijo Univ), Koki Hattori(Meijo Univ), Toma Nishibayashi(Meijo Univ), Sho Iwayama(Meijo Univ), Satoshi Kamiyama(Meijo Univ), Tetsuya Takeuchi(Meijo Univ), Motoaki Iwaya(Meijo Univ), Hideto Miyake(Mie Univ),

[Date]2023-12-01
[Paper #]ED2023-36,CPM2023-78,LQE2023-76

Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements in InGaN quantum wells by utilizing Helmholtz resonance and increasing the air pressure inside the photoacoustic cell

Hiroki Tosa(Kanazawa Inst. Tech.), Keito Mori-Tamamura(Kanazawa Inst. Tech.), Atsushi A. Yamaguchi(Kanazawa Inst. Tech.),

[Date]2023-12-01
[Paper #]ED2023-24,CPM2023-66,LQE2023-64

Fabrication of vertical AlGaN-based UV-B LD

Toma Nishibayashi(Meijo Univ.), Ryosuke Kondo(Meijo Univ.), Eri Matsubara(Meijo Univ.), Ryoya Yamada(Meijo Univ.), Yoshinori Imoto(Meijo Univ.), Koki Hattori(Meijo Univ.), Sho Iwayama(Meijo Univ.), Tetsuya Takeuchi(Meijo Univ.), Satoshi Kamiyama(Meijo Univ.), Motoaki Iwaya(Meijo Univ.), Hideto Miyake(Mie Univ.), Kohei Miyoshi(Ushio Inc.), Koichi Naniwae(Ushio Inc.), Akihiko Yamaguchi(Seishin Trading Co. Ltd.),

[Date]2023-12-01
[Paper #]ED2023-33,CPM2023-75,LQE2023-73

UV Light Detecting Properties of PEDOT:PSS/ZnO Nanorods/GZO Heterostructures with Annealed ZnO Nanorods Layers

Kaede Hirota(Ehime Univ), Masato Nakahori(Ehime Univ), Tomoaki Terasako(Ehime Univ), Masakazu Yagi(Natl. Inst. Tecnol., Kagawa coll.), Tetsuya Yamamoto(Kochi Univ. Technol.),

[Date]2023-12-01
[Paper #]ED2023-29,CPM2023-71,LQE2023-69

Carrier Transport Mechanisms in PEDOT:PSS/ZnO Nanorods/ZnO:Ga Heterostructures

Tomoaki Terasako(Ehime Univ.), Masakazu Yagi(Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto(Kochi Univ. Technol.),

[Date]2023-12-01
[Paper #]ED2023-30,CPM2023-72,LQE2023-70

Evaluation of BGaN growth condition for neutron detector and radiation detection characteristics

Takayuki Nakano(Shizuoka Univ.), Yuri Takahashi(Shizuoka Univ.), Yuto Ohta(Shizuoka Univ.), Yuki Shimizu(Shizuoka Univ.), Yoku Inoue(Shizuoka Univ.), Toru Aoki(Shizuoka Univ.),

[Date]2023-12-01
[Paper #]ED2023-27,CPM2023-69,LQE2023-67

High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements

Kenta Kobayashi(Meijo Univ.), Ruka Watanabe(Meijo Univ.), Taichi Nishikawa(Meijo Univ.), Tetsuya Takeuchi(Meijo Univ.), Motoaki Iwaya(Meijo Univ.), Satoshi Kamiyama(Meijo Univ.),

[Date]2023-12-01
[Paper #]ED2023-31,CPM2023-73,LQE2023-71