| Presentation | 2023-11-30 Device characteristics of AlGaInN/GaN HEMTs with a thin UID-GaN channel fabricated on single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin unintentionally doped (UID) GaN channel and an AlN back barrier was grown on a single-crystal (SC) AlN substrate by metal?organic chemical vapor deposition and subjected to the device fabrication and characterization. The fabricated HEMTs with a gate length of 2 μm exhibited good DC pinch-off characteristics with no large negative resistance. The off-state leakage current was an order of 10 μA even though the UID-GaN channel layer included oxygen donors with a concentration of 1 × 1017 cm-3. The pulsed I?V characteristics for the fabricated HEMTs on the AlN substrate showed much lower drain current decreasing compared to the HEMTs with an intentionally doped GaN back barrier layer fabricated on an SiC substrate. The above results indicate that the combination of the thin UID-GaN channel layer and the AlN back barrier worked effectively in the GaN HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Group-Ⅲ nitrides / HEMT / AlGaInN / GaN / UID-GaN / Single-crystal AlN / Current collapse |
| Paper # | ED2023-14,CPM2023-56,LQE2023-54 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |
| Conference Information | |
| Committee | LQE / ED / CPM |
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| Conference Date | 2023/11/30(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
| Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
| Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
| Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
| Paper Information | |
| Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device characteristics of AlGaInN/GaN HEMTs with a thin UID-GaN channel fabricated on single-crystal AlN substrate |
| Sub Title (in English) | |
| Keyword(1) | Group-Ⅲ nitrides |
| Keyword(2) | HEMT |
| Keyword(3) | AlGaInN |
| Keyword(4) | GaN |
| Keyword(5) | UID-GaN |
| Keyword(6) | Single-crystal AlN |
| Keyword(7) | Current collapse |
| 1st Author's Name | Tomoyuki Kawaide |
| 1st Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech) |
| 2nd Author's Name | Yoshinobu Kometani |
| 2nd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech) |
| 3rd Author's Name | Sakura Tanaka |
| 3rd Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech) |
| 4th Author's Name | Takashi Egawa |
| 4th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech) |
| 5th Author's Name | Makoto Miyoshi |
| 5th Author's Affiliation | Nagoya Institute of Technology(Nagoya Inst. Tech) |
| Date | 2023-11-30 |
| Paper # | ED2023-14,CPM2023-56,LQE2023-54 |
| Volume (vol) | vol.123 |
| Number (no) | ED-288,CPM-289,LQE-290 |
| Page | pp.pp.1-5(ED), pp.1-5(CPM), pp.1-5(LQE), |
| #Pages | 5 |
| Date of Issue | 2023-11-23 (ED, CPM, LQE) |