Presentation | 2023-12-01 High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In-situ layer thickness controls with in-situ reflectivity spectra measurements have been actively used in commercialized GaAs-based VCSELs, but not in GaN-based VCSELs so far. Recently, we have developed in-situ cavity length controls of GaN-based VCSELs with the above-mentioned measurements. On the other hand, in-situ center wavelength controls of bottom 40-pair AlInN/GaN DBRs have not yet been performed. In this study, we investigated the in-situ center wavelength controls of the 40-pair AlInN/GaN DBRs with the in-situ reflectivity spectra measurements. We first estimated that ±2% center wavelength deviations due to the run-to-run growth rate variations could be adjusted after the 5-pair DBR growth within the 5% increase of VCSEL mirror loss according to our reflectivity simulation. In order to demonstrate the controllability, ±2% thickness adjustments toward the target center wavelength were performed after the 5-pair DBR growths, resulting in the accuracy within the ±0.3% error after the 40-pair DBR growths. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | VCSEL / DBR / in-situ reflectivity spectra measurement |
Paper # | ED2023-31,CPM2023-73,LQE2023-71 |
Date of Issue | 2023-11-23 (ED, CPM, LQE) |
Conference Information | |
Committee | LQE / ED / CPM |
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Conference Date | 2023/11/30(2days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.) |
Vice Chair | Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.) |
Secretary | Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.) |
Assistant | Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.) |
Paper Information | |
Registration To | Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements |
Sub Title (in English) | |
Keyword(1) | VCSEL |
Keyword(2) | DBR |
Keyword(3) | in-situ reflectivity spectra measurement |
1st Author's Name | Kenta Kobayashi |
1st Author's Affiliation | Meijo University(Meijo Univ.) |
2nd Author's Name | Ruka Watanabe |
2nd Author's Affiliation | Meijo University(Meijo Univ.) |
3rd Author's Name | Taichi Nishikawa |
3rd Author's Affiliation | Meijo University(Meijo Univ.) |
4th Author's Name | Tetsuya Takeuchi |
4th Author's Affiliation | Meijo University(Meijo Univ.) |
5th Author's Name | Motoaki Iwaya |
5th Author's Affiliation | Meijo University(Meijo Univ.) |
6th Author's Name | Satoshi Kamiyama |
6th Author's Affiliation | Meijo University(Meijo Univ.) |
Date | 2023-12-01 |
Paper # | ED2023-31,CPM2023-73,LQE2023-71 |
Volume (vol) | vol.123 |
Number (no) | ED-288,CPM-289,LQE-290 |
Page | pp.pp.76-79(ED), pp.76-79(CPM), pp.76-79(LQE), |
#Pages | 4 |
Date of Issue | 2023-11-23 (ED, CPM, LQE) |