Presentation 2023-12-01
High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements
Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In-situ layer thickness controls with in-situ reflectivity spectra measurements have been actively used in commercialized GaAs-based VCSELs, but not in GaN-based VCSELs so far. Recently, we have developed in-situ cavity length controls of GaN-based VCSELs with the above-mentioned measurements. On the other hand, in-situ center wavelength controls of bottom 40-pair AlInN/GaN DBRs have not yet been performed. In this study, we investigated the in-situ center wavelength controls of the 40-pair AlInN/GaN DBRs with the in-situ reflectivity spectra measurements. We first estimated that ±2% center wavelength deviations due to the run-to-run growth rate variations could be adjusted after the 5-pair DBR growth within the 5% increase of VCSEL mirror loss according to our reflectivity simulation. In order to demonstrate the controllability, ±2% thickness adjustments toward the target center wavelength were performed after the 5-pair DBR growths, resulting in the accuracy within the ±0.3% error after the 40-pair DBR growths.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) VCSEL / DBR / in-situ reflectivity spectra measurement
Paper # ED2023-31,CPM2023-73,LQE2023-71
Date of Issue 2023-11-23 (ED, CPM, LQE)

Conference Information
Committee LQE / ED / CPM
Conference Date 2023/11/30(2days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair Kosuke Nishimura(KDDI Research) / Seiya Sakai(Hokkaido Univ.) / Hideki Nakazawa(Hirosaki Univ.)
Vice Chair Atsushi Yamaguchi(Kanazawa Inst. of Tech.) / Manabu Arai(Nagoya Univ.) / Tomoaki Terasako(Ehime Univ.)
Secretary Atsushi Yamaguchi(Fujitsu) / Manabu Arai(Yokohama National Univ.) / Tomoaki Terasako(Saga Univ.)
Assistant Keita Mochiduki(Yokohama National Univ.) / Masatoshi Koyama(Osaka Inst. of Tech.) / Tomohiro Yoshida(SUMITOMO ELECTRIC DEVICE INNOVATIONS) / Yasuo Kimura(Tokyo Univ. of Tech.) / Fumihiko Hirose(Yamagata Univ.) / Yuichi Nakamura(Toyohashi Univ. of Tech.)

Paper Information
Registration To Technical Committee on Lasers and Quantum Electronics / Technical Committee on Electron Devices / Technical Committee on Component Parts and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements
Sub Title (in English)
Keyword(1) VCSEL
Keyword(2) DBR
Keyword(3) in-situ reflectivity spectra measurement
1st Author's Name Kenta Kobayashi
1st Author's Affiliation Meijo University(Meijo Univ.)
2nd Author's Name Ruka Watanabe
2nd Author's Affiliation Meijo University(Meijo Univ.)
3rd Author's Name Taichi Nishikawa
3rd Author's Affiliation Meijo University(Meijo Univ.)
4th Author's Name Tetsuya Takeuchi
4th Author's Affiliation Meijo University(Meijo Univ.)
5th Author's Name Motoaki Iwaya
5th Author's Affiliation Meijo University(Meijo Univ.)
6th Author's Name Satoshi Kamiyama
6th Author's Affiliation Meijo University(Meijo Univ.)
Date 2023-12-01
Paper # ED2023-31,CPM2023-73,LQE2023-71
Volume (vol) vol.123
Number (no) ED-288,CPM-289,LQE-290
Page pp.pp.76-79(ED), pp.76-79(CPM), pp.76-79(LQE),
#Pages 4
Date of Issue 2023-11-23 (ED, CPM, LQE)