Electronics-Component Parts and Materials(Date:1998/08/06)

Presentation
表紙

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[Date]1998/8/6
[Paper #]
目次

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[Date]1998/8/6
[Paper #]
Growth and Electrical Chracteristics of Rapid Thermal Nitrided Ultratin Silicon Nitride Films

Taku SATOH,  Hisashi FUKUDA,  Sigeru NOMURA,  Masaki YOSHINO,  

[Date]1998/8/6
[Paper #]CPM98-59
Growth of ultrathin oxynitrided SiO_2 films using rapid thermal oxidation in a NO ambient

Yoshihiro ISHIKAWA,  Hisashi FUKUDA,  Sigeru NOMURA,  Masaki YOSHINO,  

[Date]1998/8/6
[Paper #]CPM98-60
Ultrathin N_2O-Oxynitrided Films Formed using Rapid Thermal Oxidation

Ryosuke AYA,  K.M.A. Salam,  Hisashi FUKUDA,  Shigeru NOMURA,  Masaki YOSHINO,  

[Date]1998/8/6
[Paper #]CPM98-61
Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation

Daisuke Sato,  Hisashi Fukuda,  Shigeru Nomura,  

[Date]1998/8/6
[Paper #]CPM98-62
STM Observation on Initial Oxidation of Si(111)Surface

Masahiro Miyao,  Nobuhiro Horiguchi,  Kazunori Yonei,  

[Date]1998/8/6
[Paper #]CPM98-63
Study of Interfacial Reaction in the Cu/(Hf or HfN)/SiO_2/Si Systems

Mayumi B. TAKEYAMA,  Atsushi NOYA,  Kouichirou SAKANISHI,  

[Date]1998/8/6
[Paper #]CPM98-64
Application of Nb-N film as an interlayer between Cu and SiO_2

Masakazu SAKAGAMI,  Mayumi B. TAKEYAMA,  Atsushi NOYA,  

[Date]1998/8/6
[Paper #]CPM98-65
Growth and Electrical Characteristics of Ge-nanocrystals in SiO_2 Films

Shigeyuki SAKUMA,  Hisashi FUKUDA,  Shigeru NOMURA,  

[Date]1998/8/6
[Paper #]CPM98-66
Oxidized porous silicon films and their application to electroluminescent devices

Kunihiro YAMADA,  Hisashi FUKUDA,  Shigeru NOMURA,  Motokazu NISHINO,  

[Date]1998/8/6
[Paper #]CPM98-67
[OTHERS]

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[Date]1998/8/6
[Paper #]