| Presentation | 1998/8/6 Growth and Electrical Characteristics of Ge-nanocrystals in SiO_2 Films Shigeyuki SAKUMA, Hisashi FUKUDA, Shigeru NOMURA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The Ge-nanocrystals have been formed in silicon dioxide films using metal-organic decomposition(MOD)method at temperatures ranging from 600℃ to 1000℃ in N_2 ambient and the SiO_2/Ge/SiO_2 quantum well structures were fabricated. As-deposited Ge-nanocrystals was an amorphous state but were crystallized after annealing treatments. The Ge-nanocrystals were progressively crystallized with increasing annealing temperature. Capacitance-Voltage(C-V)characteristics showed good electrical properties at annealing temperature above 900℃. The quantum well devices whose Ge-nanocrystal size is within 5nm are expected to memory device application. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal-organic decomposition / Germanium / nanocrystal / quantum well |
| Paper # | CPM98-66 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/8/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and Electrical Characteristics of Ge-nanocrystals in SiO_2 Films |
| Sub Title (in English) | |
| Keyword(1) | metal-organic decomposition |
| Keyword(2) | Germanium |
| Keyword(3) | nanocrystal |
| Keyword(4) | quantum well |
| 1st Author's Name | Shigeyuki SAKUMA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty on Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Hisashi FUKUDA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty on Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Shigeru NOMURA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty on Engineering, Muroran Institute of Technology |
| Date | 1998/8/6 |
| Paper # | CPM98-66 |
| Volume (vol) | vol.98 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |