| Presentation | 1998/8/6 Growth of ultrathin oxynitrided SiO_2 films using rapid thermal oxidation in a NO ambient Yoshihiro ISHIKAWA, Hisashi FUKUDA, Sigeru NOMURA, Masaki YOSHINO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Ultrathin silicon oxynitride films have been formed using rapid thermal oxidation(RTO)in a nitric oxide ambient as a function of oxidation temperature and time. The film thickness tends to saturate with increasing time. The overall growth does not follow the linear-parabolic law proposed by Deal and Grove but the neutral reaction at silicon surface. The chemical etching profiles of the NO-oxide films indicate a much lower etching rate near the oxynitrided SiO_2/Si interface as compared to the fact that the reaction of NO molecules with silicon surface produces a nitrogen-rich interfacial layer which acts as a barrier to an oxidant. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | raped thermal oxidation / ultrathin oxide film / Deal and Grove model / Si ULSI |
| Paper # | CPM98-60 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 1998/8/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of ultrathin oxynitrided SiO_2 films using rapid thermal oxidation in a NO ambient |
| Sub Title (in English) | |
| Keyword(1) | raped thermal oxidation |
| Keyword(2) | ultrathin oxide film |
| Keyword(3) | Deal and Grove model |
| Keyword(4) | Si ULSI |
| 1st Author's Name | Yoshihiro ISHIKAWA |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology() |
| 2nd Author's Name | Hisashi FUKUDA |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology |
| 3rd Author's Name | Sigeru NOMURA |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering Faculty of Engineering, Muroran Institute of Technology |
| 4th Author's Name | Masaki YOSHINO |
| 4th Author's Affiliation | Department of Electronic Engineering, Hokkaido Polytechnic College |
| Date | 1998/8/6 |
| Paper # | CPM98-60 |
| Volume (vol) | vol.98 |
| Number (no) | 236 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |