Electronics-Silicon Devices and Materials(Date:2005/12/14)

Presentation
Gate Length Dependence of Threshold Voltage of Transistor with Fully Silicided Gate

Yukio NISHIDA,  Takashi HAYASHI,  Tomohiro YAMASHITA,  Hidekazu ODA,  Shinsuke SAKASHITA,  Kenichi MORI,  Jiro YUGAMI,  Tkahisa EIMORI,  Yuzuru OHJI,  

[Date]2005/12/14
[Paper #]SDM2005-219
A Computational Study of Electron Transport Mechanism in Nanoscale Devices

Yoshinari KAMAKURA,  Kenji TANIGUCHI,  

[Date]2005/12/14
[Paper #]SDM2005-220
45nm-node lithography by using Mask Enhancer

Tadami SHIMIZU,  Takashi YUITO,  Shigeo IRIE,  Akio MISAKA,  Shinji KISHIMURA,  Hisashi WATANABE,  Masayuki ENDO,  Masaru SASAGO,  

[Date]2005/12/14
[Paper #]SDM2005-221
Enhancement of 1.55μm Light Emission from Ion Beam Synthesized β-FeSi_2

Yuichiro ANDO,  Akifumi IMAI,  Yoshihito MAEDA,  Yoshikazu TERAI,  Kensuke AKIYAMA,  

[Date]2005/12/14
[Paper #]SDM2005-222
Dose Optimization of Lateral SiC MOSFETs with Multi-RESURF Structure

Masato NOBORIO,  Jun SUDA,  Tsunenobu KIMOTO,  

[Date]2005/12/14
[Paper #]SDM2005-223
複写される方へ

,  

[Date]2005/12/14
[Paper #]
Notice about photocopying

,  

[Date]2005/12/14
[Paper #]
奥付

,  

[Date]2005/12/14
[Paper #]
<<12 21-28hit(28hit)