Electronics-Microwaves(Date:2012/01/04)

Presentation
High Current and High Voltage GaN-based Multi-junction Diode with P-type Barrier Controlling Layer

Daisuke Shibata,  Kazuhiro Kaibara,  Tomohiro Murata,  Yasuhiro Yamada,  Tatsuo Morita,  Yoshiharu Anda,  Masahiro Ishida,  Hidetoshi Ishida,  Tetsuzo Ueda,  Tsuyoshi Tanaka,  Daisuke Ueda,  

[Date]2012/1/4
[Paper #]ED2011-137,MW2011-160
Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications

Ken KIKUCHI,  Fumikazu YAMAKI,  Kazutaka INOUE,  Masahiro NISHI,  Hitoshi HAEMATSUI,  Norihiko UI,  Kaname EBIHARA,  Atsushi NITTA,  Seigo SANO,  

[Date]2012/1/4
[Paper #]ED2011-138,MW2011-161
Novel Field Plate design for High-power and High-gain AlGaN/GaN HFETs on Si substrates

Satoshi Nakazawa,  Naohiro Tsurumi,  Masaaki Nishijima,  Yoshiharu Anda,  Masahiro Ishida,  Tetsuzo Ueda,  Tsuyoshi Tanaka,  

[Date]2012/1/4
[Paper #]ED2011-139,MW2011-162
X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power

Osamu Moriya,  Kenta Kuroda,  Keiichi Matsushita,  Tomohide Soejima,  Kazutaka Takagi,  Shinji Takatsuka,  

[Date]2012/1/4
[Paper #]ED2011-140,MW2011-163
High Power X-band 200W AlGaN/GaN HEMT

M. Nishihara,  T. Yamamoto,  S. Mizuno,  S. Sano,  Y. Hasegawa,  

[Date]2012/1/4
[Paper #]ED2011-141,MW2011-164
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