Presentation 2012-01-12
High Power X-band 200W AlGaN/GaN HEMT
M. Nishihara, T. Yamamoto, S. Mizuno, S. Sano, Y. Hasegawa,
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Abstract(in English) A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of four dies of 0.35um-gate GaN HEMT of 16mm gate periphery together with input and output 2-stage impedance transformers assembled into a low thermal resistance package. The developed GaN HEMT provides 204W output power and 12dB small signal gain at 9.3 GHz with power added efficiency of 32% under pulse condition at a duty of 10% with a pulse width of 100usec.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN / GaN / HEMT / X-band / Hight Power
Paper # ED2011-141,MW2011-164
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Committee MW
Conference Date 2012/1/4(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) High Power X-band 200W AlGaN/GaN HEMT
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) GaN
Keyword(3) HEMT
Keyword(4) X-band
Keyword(5) Hight Power
1st Author's Name M. Nishihara
1st Author's Affiliation Sumitomo Electric Device Innovations, Inc. Yamanashi Plant()
2nd Author's Name T. Yamamoto
2nd Author's Affiliation Sumitomo Electric Device Innovations, Inc. Yamanashi Plant
3rd Author's Name S. Mizuno
3rd Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD
4th Author's Name S. Sano
4th Author's Affiliation Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD
5th Author's Name Y. Hasegawa
5th Author's Affiliation Sumitomo Electric Device Innovations, Inc. Yamanashi Plant
Date 2012-01-12
Paper # ED2011-141,MW2011-164
Volume (vol) vol.111
Number (no) 374
Page pp.pp.-
#Pages 3
Date of Issue