Presentation | 2012-01-12 High Power X-band 200W AlGaN/GaN HEMT M. Nishihara, T. Yamamoto, S. Mizuno, S. Sano, Y. Hasegawa, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists of four dies of 0.35um-gate GaN HEMT of 16mm gate periphery together with input and output 2-stage impedance transformers assembled into a low thermal resistance package. The developed GaN HEMT provides 204W output power and 12dB small signal gain at 9.3 GHz with power added efficiency of 32% under pulse condition at a duty of 10% with a pulse width of 100usec. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaN / GaN / HEMT / X-band / Hight Power |
Paper # | ED2011-141,MW2011-164 |
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Conference Information | |
Committee | MW |
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Conference Date | 2012/1/4(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Microwaves (MW) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Power X-band 200W AlGaN/GaN HEMT |
Sub Title (in English) | |
Keyword(1) | AlGaN |
Keyword(2) | GaN |
Keyword(3) | HEMT |
Keyword(4) | X-band |
Keyword(5) | Hight Power |
1st Author's Name | M. Nishihara |
1st Author's Affiliation | Sumitomo Electric Device Innovations, Inc. Yamanashi Plant() |
2nd Author's Name | T. Yamamoto |
2nd Author's Affiliation | Sumitomo Electric Device Innovations, Inc. Yamanashi Plant |
3rd Author's Name | S. Mizuno |
3rd Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD |
4th Author's Name | S. Sano |
4th Author's Affiliation | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, LTD |
5th Author's Name | Y. Hasegawa |
5th Author's Affiliation | Sumitomo Electric Device Innovations, Inc. Yamanashi Plant |
Date | 2012-01-12 |
Paper # | ED2011-141,MW2011-164 |
Volume (vol) | vol.111 |
Number (no) | 374 |
Page | pp.pp.- |
#Pages | 3 |
Date of Issue |