| Presentation | 2012-01-12 Novel Field Plate design for High-power and High-gain AlGaN/GaN HFETs on Si substrates Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB operated at 2.5GHz. The devices have field plate structures of which design is based on the device parameters extracted from the small signal RF performance. Shortening the field plate length down to 0.6μm suppresses the change of the output impedance by the variation of the drain voltage keeping low feedback capacitance, which results in the high output power with high linear gain. The presented AlGaN/GaN HFETs are very promising for various microwave applications such as cellular base stations, which would lower the system cost taking advantage of cost-effective Si substrates. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Field Effect Transistors(FET) / Field Plates / GaN / microwave power |
| Paper # | ED2011-139,MW2011-162 |
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| Conference Information | |
| Committee | MW |
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| Conference Date | 2012/1/4(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Microwaves (MW) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel Field Plate design for High-power and High-gain AlGaN/GaN HFETs on Si substrates |
| Sub Title (in English) | |
| Keyword(1) | Field Effect Transistors(FET) |
| Keyword(2) | Field Plates |
| Keyword(3) | GaN |
| Keyword(4) | microwave power |
| 1st Author's Name | Satoshi Nakazawa |
| 1st Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation() |
| 2nd Author's Name | Naohiro Tsurumi |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| 3rd Author's Name | Masaaki Nishijima |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| 4th Author's Name | Yoshiharu Anda |
| 4th Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| 5th Author's Name | Masahiro Ishida |
| 5th Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| 6th Author's Name | Tetsuzo Ueda |
| 6th Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| 7th Author's Name | Tsuyoshi Tanaka |
| 7th Author's Affiliation | Semiconductor Device Research Center, Panasonic Corporation |
| Date | 2012-01-12 |
| Paper # | ED2011-139,MW2011-162 |
| Volume (vol) | vol.111 |
| Number (no) | 374 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |