IEICE Technical Committee

Electronics-Electronic Information Displays(Date:2016/12/12)

Presentation

CMOS Inverter Consisting of Self-Aligned Four-Terminal Planar Metal Double-Gate Low-Temperature Poly-Si TFTs on Glass Substrate

Hiroki Ohsawa(Tohoku Gakuin Univ.), Akito Hara(Tohoku Gakuin Univ.),

[Date]2016-12-12
[Paper #]EID2016-19,SDM2016-100

Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC

Taro Enokizono(Kyoto Univ.), Tsunenobu Kimoto(Kyoto Univ.), Jun Suda(Kyoto Univ.),

[Date]2016-12-12
[Paper #]EID2016-22,SDM2016-103

Decomposition of Pentacene Molecules and Formation of Graphene-Based Organic Films Using Heated Catalyst

Akira Heya(Univ. of Hyogo), Naoto Matsuo(Univ. of Hyogo),

[Date]2016-12-12
[Paper #]EID2016-24,SDM2016-105

Analysis of the cause of high performance IGZO thin film transistor using SrTa2O6 as gate insulator

Kento Oikawa(NAIST), Mami N. Fujii(NAIST), Juan Paolo Bermundo(NAIST), Kiyoshi Uchiyama(Tsuruoka College), Yasuaki Ishikawa(NAIST), Yukiharu Uraoka(NAIST),

[Date]2016-12-12
[Paper #]