| Presentation | 2016-12-12 Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC Taro Enokizono, Tsunenobu Kimoto, Jun Suda, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In the EC etching, only p-type SiC is selectively etched through the following mechanism. SiC is oxidized by holes supplied from p-type SiC to the SiC/electrolyte interface. Subsequently, the formed oxide (SiOx) is removed (chemically etched) by the electrolyte. The EC etching suffers from formation of etch pits at the places where dislocations intersect the surface. In this study, we found two modes of EC etching from the viewpoint of rate balance between the oxidation of SiC by current flow and the removal of formed oxide by electrolyte, and we tried to suppress the formation of etch pits by controlling the etching mode. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | p-SiC / electrochemical etching / etch pit / dislocation |
| Paper # | EID2016-22,SDM2016-103 |
| Date of Issue | 2016-12-05 (EID, SDM) |
| Conference Information | |
| Committee | SDM / EID |
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| Conference Date | 2016/12/12(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | NAIST |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Evaluation of Silicon Related Materials |
| Chair | Tatsuya Kunikiyo(Renesas) / Tomokazu Shiga(Univ. of Electro-Comm.) |
| Vice Chair | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Ryukoku Univ.) / Yuko Kominami(Shizuoka Univ.) |
| Secretary | Takahiro Shinada(Tohoku Univ.) / Mutsumi Kimura(Renesas) / Yuko Kominami(NTT) |
| Assistant | Hiroya Ikeda(Shizuoka Univ.) / Rumiko Yamaguchi(Akita Univ.) / Hiroyuki Nitta(Japan Display) / Mitsuru Nakata(NHK) / Takashi Kojiri(ZEON) / Ryosuke Nonaka(Toshiba) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Electronic Information Displays |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Suppression of Etch Pits by Control of Etching Modes in Electrochemical Etching of p-type 4H-SiC |
| Sub Title (in English) | |
| Keyword(1) | p-SiC |
| Keyword(2) | electrochemical etching |
| Keyword(3) | etch pit |
| Keyword(4) | dislocation |
| 1st Author's Name | Taro Enokizono |
| 1st Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 2nd Author's Name | Tsunenobu Kimoto |
| 2nd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| 3rd Author's Name | Jun Suda |
| 3rd Author's Affiliation | Kyoto University(Kyoto Univ.) |
| Date | 2016-12-12 |
| Paper # | EID2016-22,SDM2016-103 |
| Volume (vol) | vol.116 |
| Number (no) | EID-354,SDM-355 |
| Page | pp.pp.59-62(EID), pp.59-62(SDM), |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (EID, SDM) |