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| Chair |
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Mayumi Takeyama (Kitami Inst. of Tech.) |
| Vice Chair |
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Yuichi Nakamura (Toyohashi Univ. of Tech.) |
| Secretary |
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Hideki Nakazawa (Hirosaki Univ.) |
| Assistant |
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Yasuo Kimura (Tokyo Univ. of Tech.), Tomoaki Terasako (Ehime Univ.), Fumihiko Hirose (Yamagata Univ.) |
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| Chair |
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Michihiko Suhara (TMU) |
| Vice Chair |
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Hiroki Fujishiro (Tokyo Univ. of Science) |
| Secretary |
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Tatsuya Iwata (Toyama Pref. Univ.), Junji Kotani (Fjitsu Lab.) |
| Assistant |
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Takuya Tsutsumi (NTT) |
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| Chair |
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Hiroshi Yasaka (Tohoku Univ.) |
| Vice Chair |
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Toshitada Umezawa (NICT) |
| Secretary |
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Masaya Nagai (Osaka Univ.), Toru Segawa (NTT) |
| Assistant |
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Kazuue Fujita (Hamamatsu), Nobuhiko Nishiyama (Tokyo Inst. of Tech.) |
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| Conference Date |
Thu, Nov 26, 2020 10:00 - 16:10
Fri, Nov 27, 2020 10:30 - 16:20 |
| Topics |
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| Conference Place |
Online |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on LQE, CPM, ED. |
Thu, Nov 26 AM
10:00 - 12:15 |
| |
10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:25 |
Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method |
Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony) |
| (2) |
10:25-10:45 |
Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells |
Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi (KIT) |
| (3) |
10:45-11:05 |
Calculation of carrier injection efficiency of AlGaN UVB Laser Diode |
Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) |
| |
11:05-11:15 |
Break ( 10 min. ) |
| (4) |
11:15-11:35 |
Study on p/n conductivity control of epitaxial AlInN films |
Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) |
| (5) |
11:35-11:55 |
Examination of GaN-based photodetectors for optical wireless power transmission system |
Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT) |
| (6) |
11:55-12:15 |
265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods |
Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
Thu, Nov 26 PM
13:30 - 16:10 |
| (7) |
13:30-13:50 |
High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts |
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) |
| (8) |
13:50-14:10 |
Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD |
Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) |
| (9) |
14:10-14:30 |
Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples -- |
Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) |
| |
14:30-14:40 |
Break ( 10 min. ) |
| (10) |
14:40-15:00 |
Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink |
Yuto Kawasumi, Yuto Yasui (Univ. of Fukui), Yukiyasu Kashiwagi, Toshiyuki Tamai (ORIST), Kenji Shiojima (Univ. of Fukui) |
| (11) |
15:00-15:20 |
Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor |
Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) |
| |
15:20-15:30 |
Break ( 10 min. ) |
| (12) |
15:30-15:50 |
Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment |
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) |
| (13) |
15:50-16:10 |
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 |
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) |
Fri, Nov 27 AM
10:30 - 12:00 |
| (14) |
10:30-10:50 |
CBD Growth of MgZnO Nanorods and Their UV Light Detecting Application |
Kohdai Hamamoto, Rikuto Kanamaru, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) |
| (15) |
10:50-11:10 |
Study on Taste Evaluations of Japanese Sake using Bioelectrical Impedance Analysis. |
Tomoya Kajiwara, Masaru Satou, Mayumi B. Takeyama (Kitami Inst. Technol) |
| |
11:10-11:20 |
Break ( 10 min. ) |
| (16) |
11:20-11:40 |
Improved performance in GaN-based HEMTs with insulated gate structures |
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) |
| (17) |
11:40-12:00 |
Time Response Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction UV Light Detectors |
Kenta Yamada, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) |
Fri, Nov 27 PM
13:00 - 16:20 |
| (18) |
13:00-13:20 |
Optimization of lateral Mg activation in LEDs with GaN tunnel junctions |
Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) |
| (19) |
13:20-13:40 |
Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction |
Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) |
| (20) |
13:40-14:00 |
Optimization of the optical waveguide layer in AlGaN-based UV-B LD |
Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) |
| |
14:00-14:10 |
Break ( 10 min. ) |
| (21) |
14:10-14:30 |
First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure |
Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) |
| (22) |
14:30-14:50 |
Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing |
Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) |
| (23) |
14:50-15:10 |
Internal quantum efficiency and excitonic stimulated emission properties of AlGaN-based UV-C multiple quantum wells |
Hideaki Murotani (NIT, Tokuyama Coll.), Ryohei Tanabe, Keisuke Hisanaga, Akira Hamada, Kanta Beppu (Yamaguchi Univ.), Noritoshi Maeda, M. Ajmal Khan, Masafumi Jo, Hideki Hirayama (RIKEN), Yoichi Yamada (Yamaguchi Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (24) |
15:20-15:40 |
MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations |
Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.) |
| (25) |
15:40-16:00 |
High-efficiency light emissions by plasmonic nano-cavities and applications to quantum devices |
Koichi Okamoto, Seiya Kaito, Kohei Shimanoe, Fumiya Murao, Tetsuya Matsuyama, Kenji Wada (Osaka Pref. Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (26) |
16:00-16:20 |
Introduction of AlN/GaN Superlattice Layers for Growth of Strain-Relaxed AlGaN Films on AlN Templates |
Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake (Mie Univ.) |
| |
16:20-16:25 |
Closing Address ( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
Hideki Nakazawa
TEL&FAX +81-172-39-3557
E- : h       -u |
| ED |
Technical Committee on Electron Devices (ED) [Latest Schedule]
|
| Contact Address |
Toshiyuki Oishi(Saga Unv.)
TEL: +81-952-28-8642
E-: oi 104cc  -u
Tatsuya Iwata(Toyama Pref. Univ.)
TEL: +81-766-56-7500
E-: t_i  pu-   |
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Masaya Nagai (Osaka Univ.)
TEL +81-6-6850-6507
E-: mimpes -u |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html |
Last modified: 2020-11-19 13:01:34
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