Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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EID2015-9
Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
pp. 1 - 4
EID2015-10
Study of Deoxyribonucleic Acid (DNA) for Channel Materials of MOSFET
-- Non-Coulomb Blockade/Staircase Phenomena --
Naoto Matsuo, Fumiya Nakamura, Tadao Takada, Kazushige Yamana, Akira Heya (Univ Hyogo), Shin Yokoyama (Hiroshima Univ), Yasuhisa Omura (Kansai Univ)
pp. 5 - 7
EID2015-11
Memory Application of Ultrafine FET utilizing Supramolecular Protein
Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
pp. 9 - 12
EID2015-12
Distribution of Forming Characteristics in NiO-based ReRAM
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
pp. 13 - 17
EID2015-13
Effect of gate voltage application on the conversion efficiency of solar-cell
Kohei Oki, Takashi Kusakabe, Naoto matsuo, Akira Heya (Univ. of Hyogo)
pp. 19 - 22
EID2015-14
Lamp-voltage dependence of FLA crystallization for a-Ge film
Shota Hirano, Akira Heya, Naoto Matsuo (Univ. of Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO)
pp. 23 - 26
EID2015-15
Evaluation of In2O3 film deposited by RF magnetron sputtering
Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 27 - 30
EID2015-16
Characterization of GaxSn1-xO thin film by the mist CVD method
Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
pp. 31 - 34
EID2015-17
Dependence of MR effect on annealing temperature of IGZO
Shogo Miyamura, Haruki Shiga, Kota Imanishi, Asuka Fukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ)
pp. 35 - 38
EID2015-18
Magnetic characteristic measurement of Cr-Si-N
Haruki Shiga, Shogo Miyamura, Kota Imanishi, Asuka Hukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.), Yashushi Hiroshima (KOA)
pp. 39 - 42
EID2015-19
Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate
Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.)
pp. 43 - 47
EID2015-20
Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor
Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ)
pp. 49 - 52
EID2015-21
Characteristic evaluation of electric current on infrared radiation in low-temperature poly-Si TFT
Shuhei Kitajima, Katsuya Kitou, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Masahide Inoue (Huawei Japan)
pp. 53 - 56
EID2015-22
Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT --
Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai)
pp. 57 - 60
EID2015-23
Operation verification of neural network using a simplified element by FPGA
Nao Nakamura, Ryuhei Morita, Yuki Koga, Hiroki Nakanishi, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
pp. 61 - 64
EID2015-24
Research and development of cellular neural network with a simplified structure
-- Operation verification by FPGA and variable resistance --
Hiroki Nakanishi, Ryuhei Morita, Yuki Koga, Nao Nakamura, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ)
pp. 65 - 68
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.