Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2011-132
Effect of High Pressure Water Vapor Annealing on the optical properties of ZnS-based inorganic EL phosphor
Takuya Kontani, Mao Taniguchi, Masahiro Horita (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 1 - 5
SDM2011-133
Basic characteristics of distributed inorganic EL panels with multi-planar electrodes array
Toshihiro Nonaka (Ryukoku Univ.), Yukiharu Uraoka (NAIST), Nobuyoshi Taguchi (Image Tech Inc.), Shinichi Yamamoto (Ryukoku Univ.)
pp. 7 - 10
SDM2011-134
Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties
Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
pp. 11 - 15
SDM2011-135
Demonstration of 15 kV 4H-SiC PiN Diodes with Improved Junction Termination Structures
Hiroki Niwa, Gan Feng, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 17 - 21
SDM2011-136
Evaluation of Intrinsic Defects in Sacrificial Oxidized High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
Seiji Nishikawa, Ryota Okada, Hideharu Matsuura (Osaka Electro-Communication univ.)
pp. 23 - 28
SDM2011-137
Selective nanoscale positioning of Co nanoparticles on Ti and SiO2 Surfaces
Satoshi Itakura (Ryukoku Univ.), Hirohumi Yamada (Kyoto Univ.), Yukiharu Uraoka (NAIST), Ichiro Yamashita (ATRL Panasonic), Shinichi Yamamoto (Ryukoku Univ.)
pp. 29 - 30
SDM2011-138
[Invited Talk]
Si sputtering epitaxy and its application to fabrication of monocrystalline Si solar cells
Wenchang Yeh (Shimane Univ.), Yupin Fang, Hsiangen Huang (NTUST)
pp. 31 - 35
SDM2011-139
[Invited Talk]
Influence of subgap density of states on electrical properties and reliability of ZnO TFT.
Mamoru Furuta, Shin-ichi Shimakawa (Kochi Univ. of Tech.)
pp. 37 - 41
SDM2011-140
Fabrication of 2D Photonic-Crystal by ZnO using Gel-Nanoimprint Process
Min Zhang, Shinji Araki, Li Lu, Masahiro Horita, Takashi Nishida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 43 - 46
SDM2011-141
Thermal Sensor Using Poly-Si Thin-Film Transistor
Jun Taya, Tomonori Mukuda, Akihiro Nakashima, Mutsumi Kimura (Ryukoku Univ.)
pp. 47 - 52
SDM2011-142
Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors
Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.)
pp. 53 - 58
SDM2011-143
Development of Process Simulators for Laser Crystallization
-- Development of 2-Dimensional and 3-Dimentional Simulators --
Mutsumi Kimura, Kuniaki Matsuki, Ryusuke Saito, Shuji Tsukamoto (Ryukoku Univ.)
pp. 59 - 64
SDM2011-144
Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO2/Si interface
Ryota Okada, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.)
pp. 65 - 70
SDM2011-145
Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 71 - 76
SDM2011-146
Shape and Size Effects on Conduction Band Structure of Si Nanowires with Rectangular Cross Section
Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 77 - 82
SDM2011-147
Charge Retentivity of DNAFET
Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Shin Yokoyama (Hiroshima Univ)
pp. 83 - 85
SDM2011-148
Investigation on filamentary conduction paths formed in Pt/NiO/Pt resistive switching cells
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
pp. 87 - 92
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.