IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 111, Number 264

Component Parts and Materials

Workshop Date : 2011-10-26 - 2011-10-27 / Issue Date : 2011-10-19

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Table of contents

CPM2011-109
Structual characterization of CuAlO2 films deposited by reactive sputtering using composite target
Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa, Tomohiko Yamakami, Katsuya Abe (SinshuUniv.)
pp. 1 - 4

CPM2011-110
Examination of ITO Thin Films for Flexible-OLEDs at Low-Voltage Driving
Chang Liu, Hiroaki Matsui, Takaaki Kibushi, Hidehiko Shimizu, Haruo Iwano, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
pp. 5 - 9

CPM2011-111
Properties of AZO Thin Films Deposited at Room Temperature by the RF-DC Coupled Magnetron Sputtering Method
Jun Kashiide, Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Kotaro Nagata, Yasuo Fukushima, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.)
pp. 11 - 15

CPM2011-112
Investigation of THz-wave emission from the stacked intrinsic Josephson junctions in a Bi2Sr2CaCu2Ox single crystal
Takahiro Kato, Takeshi Asano, Satoru Sunaga (Nagaoka Univ. Tech1), Akira Kawakami (NICT), Kanji Yasui, Katsuyoshi Hamasaki (Nagaoka Univ. Tech1)
pp. 17 - 22

CPM2011-113
MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range
Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
pp. 23 - 26

CPM2011-114
Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC)
Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui)
pp. 27 - 30

CPM2011-115
Fabrication of thin films of new alloy semiconductor CuxZnyS by the photochemical deposition method
Dula Man, Masaya Ichimura (NIT)
pp. 31 - 36

CPM2011-116
Fabrication of silicon solar cells with low impurity Si with transition metal contaminants
Daiki Takeda, Satoru Tuduki, Katsuaki Momiyama, Kensaku Kanomata, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
pp. 37 - 39

CPM2011-117
Formation of NiSi silicide and its application to Cu contacts
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.)
pp. 41 - 45

CPM2011-118
Growth of SiC films by HW-CVD using graphite filaments coated with SiC
Yuya Sakaguchi, Ryohei Ushikusa, Takuu Syu, Tomohiko Yamakami, Katsuya Abe (Shinshu Univ)
pp. 47 - 50

CPM2011-119
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS
Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
pp. 51 - 54

CPM2011-120
MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content
Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.)
pp. 55 - 58

CPM2011-121
MOVPE growth of InN using NH3 decomposition catalyst
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui)
pp. 59 - 62

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan