IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 111, Number 176

Component Parts and Materials

Workshop Date : 2011-08-10 - 2011-08-11 / Issue Date : 2011-08-03

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Table of contents

CPM2011-56
Dependence of AlN growth by pulsed laser deposition on orientation of Si substrate
Daiki Suzuki, Tomoki Kumagai, Hideki Nakazawa (Hirosaki Univ.)
pp. 1 - 6

CPM2011-57
DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure
Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.)
pp. 7 - 10

CPM2011-58
Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface
Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.)
pp. 11 - 14

CPM2011-59
Photoluminescence characteristics of Ge, SiC nanodots capped by SiC layer
Takashi Otani, Yutaka Anezaki, Sho Asano, Ariyuki Kato (Nagaoka Univ. Technol.), Yuzuru Narita (Yamagata Univ.), Hideki Nakazawa (Hirosaki Univ.), Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.)
pp. 15 - 20

CPM2011-60
Single crystal growth and characterization of high-Tc superconductor Bi-2223 by TSFZ method
Shintaro Adachi, Tomohiro Usui, Yuzo Hashimoto, Takao Watanabe (Hirosaki Univ.), Takenori Fujii (Tokyo Univ.)
pp. 21 - 25

CPM2011-61
Properties of ZrBx Thin Films with Off-stoichiometry from ZrB2 Compound
Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.)
pp. 27 - 30

CPM2011-62
Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition
Saori Okuno, Soshi Miura, Ryosuke Kamada, Hideki Nakazawa (Hirosaki Univ.)
pp. 31 - 36

CPM2011-63
Influence of B and N addition on the properties of DLC films prepared by pulsed laser deposition
Yusuke Mohnai, Ryouichi Osozawa, Hideki Nakazawa (Hirosaki Univ)
pp. 37 - 42

CPM2011-64
Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature
Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.)
pp. 43 - 46

CPM2011-65
Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement
Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.)
pp. 47 - 50

CPM2011-66
Characterization of as-grown and annealed CuAlO2 films deposited by reactive sputtering
Katsuya Abe, Takuya Yokomoto, Yosuke Maeda, Takumi Miyazawa (Shinshu Univ.)
pp. 51 - 54

CPM2011-67
Preparation of Transparent Conducting AZO Thin Films by RF Magnetron Sputtering
Takeshi Umehara, Satoru Noge (Numazu NCT)
pp. 55 - 60

CPM2011-68
Uneven thermal decomposition of silicon oxide layer
Yoshiharu Enta, Kano Ogawa, Takayuki Nagai (Hirosaki Univ.)
pp. 61 - 64

CPM2011-69
Growth kinetics of HfO2 atomic layer deposition invesitgated by IR absorption spectroscopy
Fumihiko Hirose, , Takahiko Suzuki (Yamagata Univ)
pp. 65 - 68

CPM2011-70
Development of OH-radical oxidation methods and their applications
Motomu Degai, Masaaki Kurosawa, Katsuaki Momiyama, Takahiko Suzuki, Fumihiko Hirose (Yamagata Univ.)
pp. 69 - 71

CPM2011-71
Crystal Thin Film Growth Technique for Reducing the Effects of the Base Substrate
Satoru Noge, Takeshi Umehara (Numazu NCT), Takehiko Uno (Kanagawa Inst. of Tech.)
pp. 73 - 78

CPM2011-72
Development of a Ubiquitous Processor Chip
Harunobu Uchiumi, Takumi Ishihara, Naomichi Mimura, Tatsuya Takaki, Kazuki Narita, Masa-aki Fukase, Tomoaki Sato (Hirosaki univ.)
pp. 79 - 84

CPM2011-73
Analysis on effect of annealing on material properties in bulk heterojunction organic solar cells
Akira Kurihara, Kazuki Yoshida, Takahiko Suzuki, Fumihiko Hirose (Yama Univ)
pp. 85 - 88

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan