| Presentation | 2014-12-12 Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) : Analyses of Various NiO Surface States Using Ab Initio Calculations Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created in transition metal oxide (TMO) is important. These days, many studies predict characteristics of conducting path by using first-principles calculations, due to difficulties of direct observation of them. However, many calculations adopt TMO bulk single crystal model, whereas many ReRAM samples used in experiments consist of polycrystalline thin film, which means that the formation of conducting path in grain boundary of TMO polycrystalline thin film is not considered in calculations. In this study, we investigated formative mechanism of conducting path in polycrystalline NiO-ReRAM by comparing surface energy of various orientations by using first-principles calculation. Grain boundary of NiO was suggested to be consisted of (1-10) or (11-2) surfaces. Moreover, calculated density of states for each surfaces showed that band gaps of both of these surfaces are narrower than the band gap of bulk NiO, which suggests that a value of voltage to create conductive path in ReRAM consisting of NiO polycrystalline thin film is lower than that of ReRAMs consisting of other TMO materials. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Resistive Random Access Memory / ReRAM / First-principles calculation / NiO / Density of surface energy |
| Paper # | EID2014-39,SDM2014-134 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2014/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) : Analyses of Various NiO Surface States Using Ab Initio Calculations |
| Sub Title (in English) | |
| Keyword(1) | Resistive Random Access Memory |
| Keyword(2) | ReRAM |
| Keyword(3) | First-principles calculation |
| Keyword(4) | NiO |
| Keyword(5) | Density of surface energy |
| 1st Author's Name | Takumi Moriyama |
| 1st Author's Affiliation | Graduate School of Tottori University() |
| 2nd Author's Name | Takahiro Yamasaki |
| 2nd Author's Affiliation | National Institute for Materials Science (NIMS) |
| 3rd Author's Name | Takahisa Ohno |
| 3rd Author's Affiliation | National Institute for Materials Science (NIMS) |
| 4th Author's Name | Satoru Kishida |
| 4th Author's Affiliation | Graduate School of Tottori University:Tottori University Electronic Display Reserch Cernter (TEDREC) |
| 5th Author's Name | Kentaro Kinoshita |
| 5th Author's Affiliation | Graduate School of Tottori University:Tottori University Electronic Display Reserch Cernter (TEDREC) |
| Date | 2014-12-12 |
| Paper # | EID2014-39,SDM2014-134 |
| Volume (vol) | vol.114 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |