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| Presentation | 2014-12-12 17:45 Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) -- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) |
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| PDF Download Link |  EID2014-39 SDM2014-134 Link to ES Tech. Rep. Archives: EID2014-39 SDM2014-134 |
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