Presentation 2014-12-12
Atomic Layer Deposition of Al_2O_3 Film Utilizing Water Vapor Plasma Oxidation
Tomoaki UMEHARA, Masahiro HORITA, Koji YOSHITSUGU, Yasuaki ISHIKAWA, Yukiharu URAOKA,
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Abstract(in English) In this paper, we reported Al_2O_3 insulation film deposited by atomic layer deposition(ALD) for application of GaN power devices. In the ALD for Al_2O_3 film deposition, we use plasma originated from water vapor for the oxidation process. We confirmed that the water vapor plasma assisted ALD leads to an increase in breakdown field compared with the conventional thermal-ALD Al_2O_3 film. Optical emission spectrometry reveals that active species originated form water vapor were generated, which contributes to the reaction.
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Keyword(in English) Plasma assisted-atomic layer deposition / Al_2O_3 / water vapor plasma
Paper # EID2014-36,SDM2014-131
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Atomic Layer Deposition of Al_2O_3 Film Utilizing Water Vapor Plasma Oxidation
Sub Title (in English)
Keyword(1) Plasma assisted-atomic layer deposition
Keyword(2) Al_2O_3
Keyword(3) water vapor plasma
1st Author's Name Tomoaki UMEHARA
1st Author's Affiliation Nara Institute of Science and Technology()
2nd Author's Name Masahiro HORITA
2nd Author's Affiliation Nara Institute of Science and Technology
3rd Author's Name Koji YOSHITSUGU
3rd Author's Affiliation Nara Institute of Science and Technology
4th Author's Name Yasuaki ISHIKAWA
4th Author's Affiliation Nara Institute of Science and Technology
5th Author's Name Yukiharu URAOKA
5th Author's Affiliation Nara Institute of Science and Technology
Date 2014-12-12
Paper # EID2014-36,SDM2014-131
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue