| Presentation | 2013-12-13 Characterization of interface states in SiC MOS structures with various crystal faces by conductance method Seiya NAKAZAWA, Yuichiro NANEN, Jun SUDA, Tsunenobu KIMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (0001) MOS structures. In this study, we have fabricated SiC MOS capacitors with various crystal faces and investigated interface states by high - low method, C-ψs method and conductance method. We have found that there are two types of interface states in 4H-SiC MOS interface, regardless of crystal faces and the density of interface states which have smaller time constants depends on crystal faces. Furthermore, we have compared capture cross sections of interface states which have larger time constants. The capture cross section exhibited very little dependence on crystal faces , which indicates that the origin of these interface states may be the same. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / MOS / Interface State / Conductance method |
| Paper # | SDM2013-133 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2013/12/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of interface states in SiC MOS structures with various crystal faces by conductance method |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | MOS |
| Keyword(3) | Interface State |
| Keyword(4) | Conductance method |
| 1st Author's Name | Seiya NAKAZAWA |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Yuichiro NANEN |
| 2nd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 3rd Author's Name | Jun SUDA |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| 4th Author's Name | Tsunenobu KIMOTO |
| 4th Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2013-12-13 |
| Paper # | SDM2013-133 |
| Volume (vol) | vol.113 |
| Number (no) | 351 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |