Presentation 2013-02-27
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Hiroya IKEDA, Yuhei SUZUKI, Kazutoshi MIWA, Faiz SALLEH,
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Abstract(in English) The enhancement of Seebeck coefficient by controlling the Si Fermi energy is one of key issues for enhancing the thermoelectric performance by Si nanostructures. For this purpose, the variation of Seebeck coeffi-cient in ultrathin Si-on-insulator (SOI) layer by external bias was experimentally and theoretically investigated. It was found that the SOI Seebeck coefficient is mainly tuned by the carrier concentration or Fermi energy near the buried-oxide layer and includes the influence of phonon drag.
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Keyword(in English) thermopile IR photodetector / Seebeck coefficient / ultrathin SOI layer / Fermi energy / phonon drag
Paper # ED2012-129,SDM2012-158
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Committee SDM
Conference Date 2013/2/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Sub Title (in English)
Keyword(1) thermopile IR photodetector
Keyword(2) Seebeck coefficient
Keyword(3) ultrathin SOI layer
Keyword(4) Fermi energy
Keyword(5) phonon drag
1st Author's Name Hiroya IKEDA
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Yuhei SUZUKI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Kazutoshi MIWA
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Faiz SALLEH
4th Author's Affiliation Research Institute of Electronics, Shizuoka University:the Japan Society for the Promotion of Science
Date 2013-02-27
Paper # ED2012-129,SDM2012-158
Volume (vol) vol.112
Number (no) 446
Page pp.pp.-
#Pages 5
Date of Issue