| Presentation | 2012-11-29 Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al_2O_3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa, |
|||||
|---|---|---|---|---|---|---|
| PDF Download Page |  PDF download Page Link |
|||||
| Abstract(in Japanese) | (See Japanese page) | |||||
| Abstract(in English) | We reported the threshold voltage (V_ | ) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) for power applications. To reduce the V_ | shift, we clarified the origins of the electron traps which cause the V_ | shift by focusing on atomic layer deposited (ALD)-Al_2O_3 and GaN/Al_2O_3 interface. Furthermore, the effects of ALD oxidant sources and post deposition annealing (PDA) on the V_ | shift were investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the ALD-Al_2O_3 and the GaN/Al_2O_3 interface. We clarified that the origins of the electron traps were Al(OH)_x in the ALD-Al_2O_3 and the GaN oxidation layer at the GaN/Al_2O_3 interface. Moreover, it was revealed that Al(OH)_x could be reduced by high temperature PDA, and the GaN oxidation layer could be reduced by using H_2O vapor oxidant source. From these methods, we successfully reduced the V_ | shift of insulated-gate GaN-HEMT. |
| Keyword(in Japanese) | (See Japanese page) | |||||
| Keyword(in English) | Insulated-gate GaN-HEMT / ALD-Al_2O_3 / Threshold voltage shift / Electron trap | |||||
| Paper # | ED2012-75,CPM2012-132,LQE2012-103 | |||||
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2012/11/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al_2O_3 Films |
| Sub Title (in English) | |
| Keyword(1) | Insulated-gate GaN-HEMT |
| Keyword(2) | ALD-Al_2O_3 |
| Keyword(3) | Threshold voltage shift |
| Keyword(4) | Electron trap |
| 1st Author's Name | Shiro Ozaki |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
| 2nd Author's Name | Toshihiro Ohki |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 3rd Author's Name | Masahito Kanamura |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
| 4th Author's Name | Tadahiro Imada |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 5th Author's Name | Norikazu Nakamura |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 6th Author's Name | Naoya Okamoto |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 7th Author's Name | Toyoo Miyajima |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. |
| 8th Author's Name | Toshihide Kikkawa |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2012-11-29 |
| Paper # | ED2012-75,CPM2012-132,LQE2012-103 |
| Volume (vol) | vol.112 |
| Number (no) | 327 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |