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| Presentation | 2012-11-29 15:50 Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) |
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| PDF Download Link |  ED2012-75 CPM2012-132 LQE2012-103 Link to ES Tech. Rep. Archives: ED2012-75 CPM2012-132 LQE2012-103 |
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