Presentation 2012-08-02
Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Tomoko MIZUTANI, Yoshiki YAMAMOTO, Hideki MAKIYAMA, Takaaki TSUNOMURA, Toshiaki IWAMATSU, Hidekazu ODA, Nobuyuki SUGII, Toshiro HIRAMOTO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with conventional bulk MOSFETs. It is found that drain current variability in SOTB MOSFETs is largely suppressed thanks to not only reduced V_ variability but also reduced current-onset voltage (COV) variability due to intrinsic channel.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Variability / Drain Current / FD SOI
Paper # SDM2012-69,ICD2012-37
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Committee ICD
Conference Date 2012/7/26(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Sub Title (in English)
Keyword(1) Variability
Keyword(2) Drain Current
Keyword(3) FD SOI
1st Author's Name Tomoko MIZUTANI
1st Author's Affiliation Institute of Industrial Science, University of Tokyo()
2nd Author's Name Yoshiki YAMAMOTO
2nd Author's Affiliation Low-power Electronics Association & Project (LEAP)
3rd Author's Name Hideki MAKIYAMA
3rd Author's Affiliation Low-power Electronics Association & Project (LEAP)
4th Author's Name Takaaki TSUNOMURA
4th Author's Affiliation Low-power Electronics Association & Project (LEAP)
5th Author's Name Toshiaki IWAMATSU
5th Author's Affiliation Low-power Electronics Association & Project (LEAP)
6th Author's Name Hidekazu ODA
6th Author's Affiliation Low-power Electronics Association & Project (LEAP)
7th Author's Name Nobuyuki SUGII
7th Author's Affiliation Low-power Electronics Association & Project (LEAP)
8th Author's Name Toshiro HIRAMOTO
8th Author's Affiliation Institute of Industrial Science, University of Tokyo
Date 2012-08-02
Paper # SDM2012-69,ICD2012-37
Volume (vol) vol.112
Number (no) 170
Page pp.pp.-
#Pages 4
Date of Issue