| Presentation | 2011-10-20 On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gate insulator films formed by radical reaction based insulator formation technology are known to exhibit lower leakage current across ultrathin gate insulator films and lower 1/f noise compared to thermal oxides. However, a high probability of gate insulator early breakdowns has been a big stumbling block to be solved. This paper reports on the suppression of early breakdown probability by the combination of radical oxidation and atomically flat Si surface, and its clarified mechanism of the improvement based on the interface flattening effect of the radical oxidation process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate insulator film / Breakdown field / Lifetime / Flatness |
| Paper # | SDM2011-101 |
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| Committee | SDM |
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| Conference Date | 2011/10/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology |
| Sub Title (in English) | |
| Keyword(1) | Gate insulator film |
| Keyword(2) | Breakdown field |
| Keyword(3) | Lifetime |
| Keyword(4) | Flatness |
| 1st Author's Name | Rihito Kuroda |
| 1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Akinobu Teramoto |
| 2nd Author's Affiliation | NICHe, Tohoku University |
| 3rd Author's Name | Xiang Li |
| 3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Tomoyuki Suwa |
| 4th Author's Affiliation | NICHe, Tohoku University |
| 5th Author's Name | Shigetoshi Sugawa |
| 5th Author's Affiliation | Graduate School of Engineering, Tohoku University:NICHe, Tohoku University |
| 6th Author's Name | Tadahiro Ohmi |
| 6th Author's Affiliation | NICHe, Tohoku University |
| Date | 2011-10-20 |
| Paper # | SDM2011-101 |
| Volume (vol) | vol.111 |
| Number (no) | 249 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |