| Presentation | 2011-10-27 Preparation of SiC MOS structure using SiO_2 Layer deposited by Thermal Decomposition of TEOS Mitsunori HEMMI, Yuya IGUCHI, Takashi SAKAI, Akihiko SUGITA, Tomohiko YAMAKAMI, Rinpei HAYASHIBE, Kiichi KAMIMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the deposition of the oxide layer , samples were annealed in N_2 atmosphere and H_2 atmosphere. The metal-oxide-semiconductor capacitor was formed to measure the interface properties between SiC surface and oxide layer and the properties of the defects in oxide layer. The lowest interface state density was obtained for the sample annealed N_2 atmosphere. The interface state density of those sample was 1.5×10^<11>cm^<-2>eV^<-1> at 0.2eV below the conduction band edge. The fixed oxide charge in oxide layer has been decreased by H_2 annealing. Annealed TEOS oxide layer will caused improvement of SiO_2/SiC interface properties and reduction of defects in oxide layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / TEOS / MOS / interface states / fixed oxide charge |
| Paper # | CPM2011-119 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2011/10/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of SiC MOS structure using SiO_2 Layer deposited by Thermal Decomposition of TEOS |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | TEOS |
| Keyword(3) | MOS |
| Keyword(4) | interface states |
| Keyword(5) | fixed oxide charge |
| 1st Author's Name | Mitsunori HEMMI |
| 1st Author's Affiliation | Faculty of Engineering, Shinshu University() |
| 2nd Author's Name | Yuya IGUCHI |
| 2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 3rd Author's Name | Takashi SAKAI |
| 3rd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 4th Author's Name | Akihiko SUGITA |
| 4th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 5th Author's Name | Tomohiko YAMAKAMI |
| 5th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 6th Author's Name | Rinpei HAYASHIBE |
| 6th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 7th Author's Name | Kiichi KAMIMURA |
| 7th Author's Affiliation | Faculty of Engineering, Shinshu University |
| Date | 2011-10-27 |
| Paper # | CPM2011-119 |
| Volume (vol) | vol.111 |
| Number (no) | 264 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |