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Presentation |
2011-10-27 09:55
Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) |
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CPM2011-119 Link to ES Tech. Rep. Archives: CPM2011-119 |
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