| Presentation | 2010-10-29 Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation Shin-ichiro SUZUKI, Yusuke MURATA, Mitsunori HENMI, Tomohiko YAMAKAMI, Rinpei HAYASHIBE, Kiichi KAMIMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A nitride layer was formed on a SiC surface by direct nitridation in N_2 or NH_3. The surface was characterized by x-ray photoelectron spectroscopy (XPS). The thickness of the nitride layer was estimated to be less then 2nm. The metal-insulator-semiconductor (MIS) capacitor was formed on SiC surface nitride layer to measure the interface properties between the SiC substrate and the nitride layer. The interface state density of MIS capacitor was on the order of 10^<11>-10^<12>eV^<-1>cm^<-2> at 0.3eV below the conduction band edge. The interface state density of the SiO_2/nitride/SiC sample was lower than that of the SiO_2/SiC sample. Direct nitridation seems to be one of the promising methods to reduce the interface state density in SiC MIS structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / nitride / interface state density / MIS |
| Paper # | CPM2010-100 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2010/10/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | nitride |
| Keyword(3) | interface state density |
| Keyword(4) | MIS |
| 1st Author's Name | Shin-ichiro SUZUKI |
| 1st Author's Affiliation | Faculty of Engineering, Shinshu University() |
| 2nd Author's Name | Yusuke MURATA |
| 2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 3rd Author's Name | Mitsunori HENMI |
| 3rd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 4th Author's Name | Tomohiko YAMAKAMI |
| 4th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 5th Author's Name | Rinpei HAYASHIBE |
| 5th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 6th Author's Name | Kiichi KAMIMURA |
| 6th Author's Affiliation | Faculty of Engineering, Shinshu University |
| Date | 2010-10-29 |
| Paper # | CPM2010-100 |
| Volume (vol) | vol.110 |
| Number (no) | 261 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |