| Presentation | 2009-10-29 A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process Jun GAO, Jumpei ISHIKAWA, Shun-ichiro OHMI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To improve the thermal stability of Pt_xHf_ySi formed at 400℃/60min, 2-step silicidation process was investigated. By using a rapid thermal annealing (RTA) system, the Pt/Hf/n-Si(100) stacked layers were annealed at 400℃ for 60min and then re-annealed at 550-750℃ for 1min in a flowing N_2 ambient to form silicide layer. In the case of silicide layer formed at 400℃/60min, it was found that sheet resistance deteriorated to 30-40Ω/sq and barrier height became 0.75eV at the temperature of 550℃ or higher. On the other hand, In the case of Pt_xHf_ySi formed at 2-step silicidation, it was found that barrier height is kept at 0.65eV and low sheet resistance (30Ω/sq) is obtained, even after 700℃ re-anneal. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | PtSi / Monosilicide / Alloy / Barrier Height / Workfunction / Sheet resistance / 2-step silicidation |
| Paper # | SDM2009-118 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2009/10/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study on Improvement of Thermal Stability for PtSi Alloying with Hf Utilizing Two-Step Silicidation Process |
| Sub Title (in English) | |
| Keyword(1) | PtSi |
| Keyword(2) | Monosilicide |
| Keyword(3) | Alloy |
| Keyword(4) | Barrier Height |
| Keyword(5) | Workfunction |
| Keyword(6) | Sheet resistance |
| Keyword(7) | 2-step silicidation |
| 1st Author's Name | Jun GAO |
| 1st Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Jumpei ISHIKAWA |
| 2nd Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Shun-ichiro OHMI |
| 3rd Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2009-10-29 |
| Paper # | SDM2009-118 |
| Volume (vol) | vol.109 |
| Number (no) | 257 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |