| Presentation | 2009-08-10 Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer Shin'ichiro SUZUKI, Akira SENGOKU, Takuma TSUJI, Mitsunori HENMI, Yusuke MURATA, Tomohiko YAMAKAMI, Rinpei HAYASHIBE, Kiichi KAMIMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Interface state density was estimated from diode factor n of SiC MIS Schottky diode. The interface state density was the order of 10^<12>cm^<-2>eV^<-1>, and was same order to the value for the sample carefully prepared by oxidation and post oxidation annealing. The interface state density determined from n was consistent to the value calculated from the capacitance voltage curve of SiO_2/nitride/SiC MIS diode by Terman method. High temperature nitridation was effective to reduce the interface state density. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiC / Nitride / Interface / MIS Schottky |
| Paper # | CPM2009-35 |
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| Conference Information | |
| Committee | CPM |
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| Conference Date | 2009/8/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of SiC MIS structure using direct nitridation layer as an interfacial layer |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | Nitride |
| Keyword(3) | Interface |
| Keyword(4) | MIS Schottky |
| 1st Author's Name | Shin'ichiro SUZUKI |
| 1st Author's Affiliation | Faculty of Engineering, Shinshu University() |
| 2nd Author's Name | Akira SENGOKU |
| 2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 3rd Author's Name | Takuma TSUJI |
| 3rd Author's Affiliation | Faculty of Engineering, Shinshu University |
| 4th Author's Name | Mitsunori HENMI |
| 4th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 5th Author's Name | Yusuke MURATA |
| 5th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 6th Author's Name | Tomohiko YAMAKAMI |
| 6th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 7th Author's Name | Rinpei HAYASHIBE |
| 7th Author's Affiliation | Faculty of Engineering, Shinshu University |
| 8th Author's Name | Kiichi KAMIMURA |
| 8th Author's Affiliation | Faculty of Engineering, Shinshu University |
| Date | 2009-08-10 |
| Paper # | CPM2009-35 |
| Volume (vol) | vol.109 |
| Number (no) | 171 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |