| Presentation | 2009-04-24 Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric pressure Shogo MURASHIGE, Mitsutaka MATSUMOTO, Yohei INAYOSHI, Maki SUEMITSU, Setsuo NAKAJIMA, Tsuyoshi UEHARA, Yasutake Toyoshima, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polycrystalline Si films have been deposited on polyethylene terephthalate (PET) substrates using pulsed-plasma CVD under normal pressures. Crystalline structure of the Si films was evaluated by Raman scattering spectroscopy and transmission electron microscopy (TEM). The poly-Si film shows a high crystallinity of 80% or more. A growth rate as high as 40nm/min is obtained and direct growth of the Si polycrystallites on the PET substrate without incubation layers was confirmed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Polycrystalline silicon / PECVD / Polyethylene terephthalate / Pulsed / Atmospheric pressure |
| Paper # | ED2009-15 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2009/4/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric pressure |
| Sub Title (in English) | |
| Keyword(1) | Polycrystalline silicon |
| Keyword(2) | PECVD |
| Keyword(3) | Polyethylene terephthalate |
| Keyword(4) | Pulsed |
| Keyword(5) | Atmospheric pressure |
| 1st Author's Name | Shogo MURASHIGE |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Mitsutaka MATSUMOTO |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Yohei INAYOSHI |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Maki SUEMITSU |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | Setsuo NAKAJIMA |
| 5th Author's Affiliation | Sekisui Chemicals Co. Ltd |
| 6th Author's Name | Tsuyoshi UEHARA |
| 6th Author's Affiliation | Sekisui Chemicals Co. Ltd |
| 7th Author's Name | Yasutake Toyoshima |
| 7th Author's Affiliation | Energy Technology Research Institute,AIST |
| Date | 2009-04-24 |
| Paper # | ED2009-15 |
| Volume (vol) | vol.109 |
| Number (no) | 16 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |